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VN2460N8-G

Microchip Technology

VN2460N8-G by Microchip Technology

VN2460N8-G by Microchip Technology is a small signal N-channel FET with a min DS breakdown voltage of 600V. It is used for switching applications and operates in enhancement mode. With a max drain current of 0.2A and a max power dissipation of 1.6W, it offers reliable performance in various electronic circuits.

Median Price

$1.530

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 578 parts In-Stock

1+ parts

$1.520

100+ parts

$1.108

1k+ parts

$1.086

10k+ parts

-

578

$1.520

$1.108

$1.086

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DigiKey

USA . 6,173 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

-

10k+ parts

$1.150

6,173

$1.540

$1.150

-

$1.150

Mouser Electronics

USA . 3,919 parts In-Stock

1+ parts

$1.540

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$1.150

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-

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3,919

$1.540

$1.150

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Chip1Stop

Japan . 2,000 parts In-Stock

1+ parts

$2.910

100+ parts

$1.050

1k+ parts

$0.874

10k+ parts

$0.816

2,000

$2.910

$1.050

$0.874

$0.816

Master Electronics

USA . 5,300 parts In-Stock

1+ parts

-

100+ parts

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$1.116

10k+ parts

$1.111

5,300

-

-

$1.116

$1.111

Verical

USA . 5,264 parts In-Stock

1+ parts

-

100+ parts

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$1.335

10k+ parts

$1.301

5,264

-

-

$1.335

$1.301

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.099

100+ parts

-

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-

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10

$1.099

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-

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Chip Stock

USA . 8,000 parts In-Stock

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8,000

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IBS Electronics

USA . 5,300 parts In-Stock

1+ parts

-

100+ parts

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$1.565

10k+ parts

$1.558

5,300

-

-

$1.565

$1.558

Vyrian

USA . 2,852 parts In-Stock

1+ parts

-

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2,852

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Semi Source

USA . 70 parts In-Stock

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70

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Bristol Electronics

USA . 6 parts In-Stock

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6

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.388

100+ parts

$0.353

1k+ parts

$0.318

10k+ parts

-

10

$0.388

$0.353

$0.318

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Aztec Data Supply Inc.

USA . 270 parts In-Stock

1+ parts

$0.460

100+ parts

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270

$0.460

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Ampacity Inc.

Singapore . 2,796 parts In-Stock

1+ parts

$0.910

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2,796

$0.910

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Semicontronic

India . 2,622 parts In-Stock

1+ parts

$0.910

100+ parts

$0.887

1k+ parts

$0.883

10k+ parts

-

2,622

$0.910

$0.887

$0.883

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$1.077

100+ parts

-

1k+ parts

$1.034

10k+ parts

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2,000

$1.077

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$1.034

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Argo Parts USA

USA . 3,339 parts In-Stock

1+ parts

$1.099

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3,339

$1.099

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Continental Prestige Electronics

USA . 1,948 parts In-Stock

1+ parts

$1.099

100+ parts

-

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10k+ parts

$1.077

1,948

$1.099

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$1.077

Corohmni

South Africa . 654 parts In-Stock

1+ parts

$1.242

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654

$1.242

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Microchip USA

USA . 5,989 parts In-Stock

1+ parts

$7.475

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5,989

$7.475

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Lixinc

USA . 5,448 parts In-Stock

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5,448

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RGB Technical Solutions

Ukraine . 4,295 parts In-Stock

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4,295

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iodParts Technologies Inc.

India . 1,270 parts In-Stock

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1,270

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Authorized Procurement Solutions

USA . 363 parts In-Stock

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363

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Overview

Discover the VN2460N8-G by Microchip Technology, a high-quality Small Signal Field Effect Transistor (FET) that guarantees optimal performance in switching applications. With its N-channel configuration and built-in diode, this product offers unparalleled value and benefits to customers. Its enhanced mode operation, along with a minimum DS breakdown voltage of 600V, ensures reliable and efficient functioning. Designed with SILICON transistor element material and METAL-OXIDE SEMICONDUCTOR technology, the VN2460N8-G delivers exceptional durability and stability. Trust Microchip Technology, a renowned manufacturer, to provide you with cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material provides durability and protection, ensuring reliable performance in various environments.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration of this product allows for efficient current flow and low resistance, making it suitable for many applications requiring high-speed switching.

Configuration: SINGLE WITH BUILT-IN DIODE

With a built-in diode, this product offers additional convenience and versatility in circuit design, allowing for simplified integration and reducing the need for external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and efficient operation, making it ideal for use in power supply circuits, motor control systems, and more.

Surface Mount: YES

With surface mount capability, this product offers easy and convenient installation on PCBs, saving valuable space and enabling automated assembly processes.

Minimum DS Breakdown Voltage: 600 V

The minimum DS (drain-source) breakdown voltage of 600V ensures reliable operation in high-voltage applications, making this transistor suitable for use in power management systems and industrial equipment.

Package Shape: RECTANGULAR

The rectangular package shape of this transistor allows for efficient board layout and space utilization, making it a suitable choice for compact electronic devices.

Terminal Form: FLAT

The flat terminal form provides a secure electrical connection and facilitates easy soldering, ensuring reliable and stable performance of the transistor in various circuit configurations.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operating mode of this transistor offers improved control over the flow of current, enhancing efficiency and allowing for precise switching characteristics in different applications.

No. of Elements: 1

With a single element, this transistor simplifies circuit design and reduces component count, making it cost-effective and suitable for compact electronic devices.

Maximum Pulsed Drain Current (IDM): 0.6 A

This transistor's capability to handle a maximum pulsed drain current of 0.6A ensures reliable performance during peak load conditions, making it well-suited for applications that require occasional high-current pulses.

No. of Terminals: 3

With three terminals, this transistor offers versatile connectivity options, allowing for flexibility in circuit design and convenient integration into different systems.

Maximum Power Dissipation (Abs): 1.6 W

The maximum power dissipation of 1.6W ensures the ability to handle high-power applications without compromising performance or reliability, making this transistor suitable for use in various demanding environments.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this transistor allows for space-saving installation on PCBs, making it suitable for compact electronic devices where size is a critical factor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This transistor's metal-oxide semiconductor technology offers low power consumption, high efficiency, and excellent noise performance, making it an ideal choice for audio amplifiers, filters, and other low-power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, ensuring stable and reliable operation even in demanding thermal environments.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent performance characteristics, including high breakdown voltage, low leakage current, and high switching speed, making it an optimal choice for various applications.

Maximum Turn On Time (ton): 20 ns

The maximum turn-on time of 20ns ensures fast and efficient switching operation, enabling precise control and reducing power loss, making this transistor suitable for applications that require rapid switching speed.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this transistor can withstand extremely low temperatures, making it suitable for use in harsh environments or applications that require reliable operation in cold conditions.

Maximum Turn Off Time (toff): 45 ns

The maximum turn-off time of 45ns ensures quick and efficient switching-off, minimizing power loss and allowing for precise control in applications such as pulse-width modulation or motor control.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and excellent solderability, ensuring reliable and long-lasting electrical connections, even in challenging operating conditions.

Maximum Drain Current (ID): 0.2 A

With a maximum drain current of 0.2A, this transistor can handle moderate current loads, making it suitable for use in low-power electronic circuits and small-scale applications.

Maximum Drain-Source On Resistance: 25 ohm

The maximum drain-source on resistance of 25 ohms ensures low power loss and efficient current flow, making this transistor suitable for applications requiring low voltage drop and high efficiency.

Terminal Position: SINGLE

With a single terminal position, this transistor simplifies PCB layout and allows for easy integration into circuit designs, making it a convenient choice for various electronic applications.

Moisture Sensitivity Level (MSL): 1

This transistor's moisture sensitivity level of 1 ensures its reliability during handling and storage, making it suitable for automated assembly processes and offering extended shelf-life.

Case Connection: DRAIN

The case connection to the drain terminal enhances heat dissipation and helps in maintaining a low junction temperature, ensuring long-term reliability and improved performance in high-power applications.

Maximum Time At Peak Reflow Temperature (s): 40

With a maximum time of 40 seconds at peak reflow temperature, this transistor can withstand soldering processes without degradation, promoting efficient and reliable manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for effective solder joint formation, ensuring the reliable integration of this transistor into PCB assembly processes.

Maximum Feedback Capacitance (Crss): 25 pF

The maximum feedback capacitance of 25pF minimizes the risk of unwanted feedback oscillations, ensuring stable and reliable operation in various circuit configurations.

Technical Specifications

Small Signal Field Effect Transistors (FET) VN2460N8-G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Additional Features:

FAST SWITCHING

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

25 pF

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

.6 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

45 ns

Maximum Turn On Time (ton):

20 ns

Trade Compliance

VN2460N8-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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