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JANTX1N6467US

Microchip Technology

JANTX1N6467US by Microchip Technology

JANTX1N6467US by Microchip Tech is a 500W TRANS VOLTAGE SUPPRESSOR DIODE with 40.3V max reverse voltage, ideal for transient suppression apps. It's a unidirectional diode in round package shape, surface mountable, and MIL-19500/551C compliant. With 2 terminals and 2.5W max power dissipation, it's designed for high-power protection needs.

Median Price

$17.132

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Master Electronics

USA . 97 parts In-Stock

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$13.780

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Verical

USA . 95 parts In-Stock

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$20.484

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Nova Conductors

Japan . 700 parts In-Stock

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$23.052

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Vyrian

USA . 2,624 parts In-Stock

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NexGen Digital

USA . 322 parts In-Stock

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IBS Electronics

USA . 202 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 58 parts In-Stock

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Sunrise Surplus Inc.

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Resion

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AZTECH Wire

Italy . 838 parts In-Stock

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$12.784

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Ampacity Inc.

Singapore . 77 parts In-Stock

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Continental Prestige Electronics

USA . 4,822 parts In-Stock

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Component Stockers USA

USA . 438 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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Argo Parts USA

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Netroflash

USA . 1,000 parts In-Stock

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$21.899

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Fulton Briggs Corp.

USA . 858 parts In-Stock

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Overview

Power up your electronic devices with the JANTX1N6467US by Microchip Technology, a high-quality transient suppression device designed to protect your equipment from voltage spikes and surges. With a maximum power dissipation of 500W and a reference standard of MIL-19500/551C, this diode offers reliable performance and durability. Ideal for applications in military, aerospace, and industrial sectors, this product ensures smooth operation and long-lasting protection. Invest in the JANTX1N6467US today and experience peace of mind knowing your electronics are safeguarded against potential damage.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes the product easy to use and install in a variety of applications.

Surface Mount: YES

Surface mount capability allows for efficient PCB assembly and saves space on the board.

Maximum Non Repetitive Peak Reverse Power Dissipation: 500 W

High power dissipation capability ensures effective protection against voltage spikes and surges.

Package Shape: ROUND

Round package shape allows for easy integration into different electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the connectivity and installation process.

Package Style (Meter): LONG FORM

Long form package style provides stability and durability to the device.

Terminal Finish: TIN LEAD

Tin lead terminal finish enhances the product's solderability and reliability.

Terminal Position: END

End terminal position facilitates easy connection and maintenance.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents interference with other components.

Maximum Power Dissipation: 2.5 W

Efficient power dissipation capability helps in maintaining the product's temperature within permissible limits.

Reference Standard: MIL-19500/551C

Compliance with MIL standards ensures high quality and reliability of the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type provides superior protection against transient voltage spikes.

Technology: AVALANCHE

Avalanche technology offers high energy handling capability, making the product suitable for demanding applications.

Terminal Form: WRAP AROUND

Wrap around terminal form ensures secure and reliable connections.

Maximum Repetitive Peak Reverse Voltage: 40.3 V

High repetitive peak reverse voltage rating makes the product suitable for a wide range of applications.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures consistent protection in one direction, making it ideal for specific applications.

Diode Element Material: SILICON

Silicon diode element material provides stable and reliable performance over a wide temperature range.

Technical Specifications

Transient Suppression Devices JANTX1N6467US attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-XELF-R2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

2.5 W

Qualification:

Qualified

Reference Standard:

MIL-19500/551C

Maximum Repetitive Peak Reverse Voltage:

40.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

END

Trade Compliance

JANTX1N6467US Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-515-0313, 5961015150313

NIIN

015150313

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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