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JANTXV1N5631A

Microchip Technology

JANTXV1N5631A by Microchip Technology

JANTXV1N5631A by Microchip Tech is a TRANS VOLTAGE SUPPRESSOR DIODE with 1500W power dissipation, 7.79-8.61V breakdown voltage range, and UNIDIRECTIONAL polarity. It is used in transient suppression applications per MIL-19500 standard, offering protection against voltage spikes in electronic circuits.

Median Price

$53.189

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$53.189

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50

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Vyrian

USA . 544 parts In-Stock

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544

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 544 parts In-Stock

1+ parts

$9.356

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544

$9.356

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Continental Prestige Electronics

USA . 1,637 parts In-Stock

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$53.189

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$52.125

1,637

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$52.125

Netroflash

USA . 500 parts In-Stock

1+ parts

$53.189

100+ parts

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$50.530

10k+ parts

$49.466

500

$53.189

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$50.530

$49.466

RGB Technical Solutions

Ukraine . 721 parts In-Stock

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Argo Parts USA

USA . 659 parts In-Stock

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Overview

Enhance your electronic systems with the JANTXV1N5631A by Microchip Technology - a top-quality transient suppression device designed to protect your circuits from voltage spikes. Manufactured by a trusted industry leader, this product offers unparalleled reliability and performance. Ideal for a wide range of applications, this diode ensures maximum protection with its high power dissipation capabilities. Trust Microchip Technology to provide you with the best solution for your circuit protection needs.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides durability and reliability, ensuring the device can withstand harsh environments and heavy-duty applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capacity, this transient suppression device can effectively handle transient overvoltages and protect sensitive electrical components from damage.

Package Shape: ROUND

The round package shape allows for easy installation and mounting, making it suitable for various electronic systems and applications.

No. of Terminals: 2

Having only 2 terminals simplifies the device's connection and integration into existing circuitry, making it user-friendly and easy to install.

Maximum Power Dissipation: 1 W

This device has a low power dissipation, which helps in reducing energy consumption and heat generation during normal operation.

Minimum Breakdown Voltage: 7.79 V

The minimum breakdown voltage of 7.79 V ensures that the device activates promptly when the voltage exceeds this threshold, offering effective transient suppression.

Maximum Breakdown Voltage: 8.61 V

The maximum breakdown voltage of 8.61 V indicates the upper limit at which the device can handle transient overvoltages, providing a wide range of protection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a transient voltage suppressor diode, this device has fast response times and high clamping capabilities when dealing with sudden voltage spikes, ensuring effective protection for connected equipment.

Technology: AVALANCHE

Utilizing avalanche technology, this device can handle high transient currents and energy levels without sustaining damage, offering robust transient suppression performance.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only conducts in one direction, providing consistent and reliable protection against transient overvoltages.

Technical Specifications

Transient Suppression Devices JANTXV1N5631A attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-202AA

JESD-30 Code:

O-MALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Qualified

Reference Standard:

MIL-19500

Maximum Repetitive Peak Reverse Voltage:

7.02 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JANTXV1N5631A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-252-3790, 5961012523790

NIIN

012523790

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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