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JANTX1N5631A

General Semiconductor

JANTX1N5631A by General Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

$50.590

Lifecycle Status

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8

In-Stock Inventory

1k+

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Avnet

USA . 969 parts In-Stock

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$41.922

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Microchip Technology

USA . 1,011 parts In-Stock

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$55.430

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Arrow

USA . 3,313 parts In-Stock

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$50.590

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$49.580

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3,313

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$49.580

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Verical

USA . 3,313 parts In-Stock

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3,313

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Nova Conductors

Japan . 900 parts In-Stock

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$59.380

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900

$59.380

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Vyrian

USA . 4,300 parts In-Stock

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NexGen Digital

USA . 400 parts In-Stock

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IBS Electronics

USA . 31 parts In-Stock

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$29.438

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AZTECH Wire

Italy . 620 parts In-Stock

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$19.574

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Continental Prestige Electronics

USA . 2,881 parts In-Stock

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$59.380

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$58.192

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Argo Parts USA

USA . 4,335 parts In-Stock

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RGB Technical Solutions

Ukraine . 1,526 parts In-Stock

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Bastille Electronics

Australia . 23 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1 parts In-Stock

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Technical Specifications

Transient Suppression Devices JANTX1N5631A attributes and parameters. Explore more Transient Suppression Devices devices from General Semiconductor

Specs

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

12.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-MALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500/500

Maximum Repetitive Peak Reverse Voltage:

7.02 V

Maximum Reverse Current:

200 uA

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

JANTX1N5631A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-030-2189, 5961010302189

NIIN

010302189

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

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