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JANTX1N5631A

New England Semiconductor

JANTX1N5631A by New England Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

$50.590

Lifecycle Status

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8

In-Stock Inventory

1k+

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Avnet

USA . 969 parts In-Stock

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$41.922

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Microchip Technology

USA . 1,011 parts In-Stock

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$55.430

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Arrow

USA . 3,313 parts In-Stock

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$50.590

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$49.580

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3,313

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$49.580

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Verical

USA . 3,313 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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$59.380

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Vyrian

USA . 4,300 parts In-Stock

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NexGen Digital

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IBS Electronics

USA . 31 parts In-Stock

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$29.438

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AZTECH Wire

Italy . 620 parts In-Stock

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$19.574

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Continental Prestige Electronics

USA . 2,881 parts In-Stock

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$59.380

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$58.192

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Argo Parts USA

USA . 4,335 parts In-Stock

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RGB Technical Solutions

Ukraine . 1,526 parts In-Stock

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Bastille Electronics

Australia . 23 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1 parts In-Stock

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Technical Specifications

Transient Suppression Devices JANTX1N5631A attributes and parameters. Explore more Transient Suppression Devices devices from New England Semiconductor

Specs

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-13

JESD-30 Code:

O-MALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500/500

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

JANTX1N5631A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-030-2189, 5961010302189

NIIN

010302189

PCN

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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