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JANTX1N5631A

Microchip Technology

JANTX1N5631A by Microchip Technology

JANTX1N5631A by Microchip Tech is a TRANS VOLTAGE SUPPRESSOR DIODE with 1500W power dissipation, 7.79-8.61V breakdown voltage range, and -65 to 175°C operating temp. Ideal for transient suppression in military applications due to MIL-19500 standard compliance and UNIDIRECTIONAL polarity.

Median Price

$50.590

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 969 parts In-Stock

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$41.922

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Microchip Technology

USA . 1,011 parts In-Stock

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$55.430

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Arrow

USA . 3,313 parts In-Stock

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$50.590

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$49.580

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3,313

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$50.590

$49.580

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Verical

USA . 3,313 parts In-Stock

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3,313

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$59.380

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900

$59.380

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Vyrian

USA . 4,300 parts In-Stock

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NexGen Digital

USA . 400 parts In-Stock

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400

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IBS Electronics

USA . 31 parts In-Stock

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$29.438

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Distributors (Availability)

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AZTECH Wire

Italy . 620 parts In-Stock

1+ parts

$19.574

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$19.574

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Continental Prestige Electronics

USA . 2,881 parts In-Stock

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$59.380

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$58.192

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$59.380

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$58.192

Argo Parts USA

USA . 4,335 parts In-Stock

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RGB Technical Solutions

Ukraine . 1,526 parts In-Stock

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Bastille Electronics

Australia . 23 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1 parts In-Stock

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Overview

Enhance your electronic systems with the JANTX1N5631A from Microchip Technology, a leading manufacturer known for its superior quality and reliability. As a transient suppression device, this product safeguards your circuits from voltage spikes, ensuring smooth operation and longevity. Ideal for a wide range of applications, this diode offers unmatched protection against power surges, making it a valuable addition to any design. Trust Microchip Technology for top-notch components that deliver exceptional performance and peace of mind.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides durability and efficient heat dissipation, making it suitable for high-power applications.

Config: SINGLE

The single configuration simplifies installation and maintenance, making it a cost-effective choice for applications requiring transient suppression.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation rating, this device can handle large surges of energy, ensuring reliable protection for sensitive electronics.

Package Shape: ROUND

The round shape allows for easy mounting and integration into various systems, making it versatile for different applications.

No. of Terminals: 2

The straightforward design with two terminals simplifies installation and reduces the risk of wiring errors for enhanced safety.

Package Style (Meter): LONG FORM

The long form meter style provides clear visibility and easy identification in crowded circuit boards, enhancing convenience during assembly.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature tolerance ensures reliable performance in harsh environments, making it suitable for industrial applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature rating allows for use in extreme cold conditions, expanding the range of applications for this product.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers excellent conductivity and corrosion resistance, ensuring optimal performance over an extended lifespan.

Terminal Position: AXIAL

The axial terminal position simplifies connection and ensures a secure fit, enhancing the overall reliability of the device.

Technical Specifications

Transient Suppression Devices JANTX1N5631A attributes and parameters. Explore more Transient Suppression Devices devices from Microchip Technology

Specs

Maximum Breakdown Voltage:

8.61 V

Minimum Breakdown Voltage:

7.79 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-202AA

JESD-30 Code:

O-MALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Qualified

Reference Standard:

MIL-19500

Maximum Repetitive Peak Reverse Voltage:

7.02 V

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JANTX1N5631A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-030-2189, 5961010302189

NIIN

010302189

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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