Loading...

IXTH80N20L

Littelfuse

IXTH80N20L by Littelfuse

IXTH80N20L by Littelfuse is a N-CHANNEL FET with 200V DS Breakdown Voltage, 340A IDM, and 0.032 ohm RDS(on). Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with 520W power dissipation. The transistor has a max temperature of 150°C and features a built-in diode in a RECTANGULAR package.

Median Price

$11.999

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 150 parts In-Stock

1+ parts

$11.956

100+ parts

$11.028

1k+ parts

$10.537

10k+ parts

-

150

$11.956

$11.028

$10.537

-

Verical

USA . 150 parts In-Stock

1+ parts

$11.999

100+ parts

$11.068

1k+ parts

$10.576

10k+ parts

-

150

$11.999

$11.068

$10.576

-

Mouser Electronics

USA . 894 parts In-Stock

1+ parts

$14.990

100+ parts

$9.900

1k+ parts

$8.610

10k+ parts

-

894

$14.990

$9.900

$8.610

-

DigiKey

USA . 605 parts In-Stock

1+ parts

$16.180

100+ parts

$9.980

1k+ parts

$8.608

10k+ parts

-

605

$16.180

$9.980

$8.608

-

TTI

USA . 60 parts In-Stock

1+ parts

-

100+ parts

$9.570

1k+ parts

$8.570

10k+ parts

$8.400

60

-

$9.570

$8.570

$8.400

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$11.890

100+ parts

-

1k+ parts

-

10k+ parts

-

550

$11.890

-

-

-

Ozdisan Elektronik

Türkiye . 493 parts In-Stock

1+ parts

$15.850

100+ parts

-

1k+ parts

-

10k+ parts

-

493

$15.850

-

-

-

NAC Semi

USA . 571 parts In-Stock

1+ parts

-

100+ parts

$27.830

1k+ parts

$25.690

10k+ parts

-

571

-

$27.830

$25.690

-

Vyrian

USA . 298 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

298

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 150 parts In-Stock

1+ parts

$8.130

100+ parts

$7.927

1k+ parts

$7.886

10k+ parts

-

150

$8.130

$7.927

$7.886

-

Ampacity Inc.

Singapore . 28 parts In-Stock

1+ parts

$8.130

100+ parts

-

1k+ parts

-

10k+ parts

-

28

$8.130

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$11.652

100+ parts

-

1k+ parts

$11.186

10k+ parts

-

1,000

$11.652

-

$11.186

-

Continental Prestige Electronics

USA . 4,462 parts In-Stock

1+ parts

$11.890

100+ parts

-

1k+ parts

-

10k+ parts

$11.652

4,462

$11.890

-

-

$11.652

Component Stockers USA

USA . 3,584 parts In-Stock

1+ parts

$12.830

100+ parts

$10.970

1k+ parts

$9.310

10k+ parts

-

3,584

$12.830

$10.970

$9.310

-

Microchip USA

USA . 2,559 parts In-Stock

1+ parts

$42.504

100+ parts

-

1k+ parts

-

10k+ parts

-

2,559

$42.504

-

-

-

Argo Parts USA

USA . 2,441 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,441

-

-

-

-

Perfect Parts

USA . 323 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

323

-

-

-

-

Authorized Procurement Solutions

USA . 118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

118

-

-

-

-

Overview

Upgrade your power systems with the high-quality IXTH80N20L Power FET by Littelfuse. Designed for reliability and performance, this N-CHANNEL transistor offers a wide range of applications, including amplifiers. With a maximum drain current of 80 A and an operating temperature up to 150°C, this transistor provides superior power dissipation and enhanced efficiency. Trust Littelfuse for top-notch components that deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, contributing to the overall reliability of the product.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have better performance characteristics and lower on-state resistance compared to P-channel FETs, making them a preferred choice for many applications.

Minimum DS Breakdown Voltage: 200 V

With a high minimum breakdown voltage, this FET can handle higher voltages effectively, making it suitable for applications requiring robustness and reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies the circuit design and provides reverse polarity protection, enhancing the overall functionality of the FET.

Maximum Drain Current (Abs): 80 A

The high maximum drain current capability allows for handling high current loads, making this FET suitable for power applications.

Maximum Power Dissipation (Abs): 520 W

With a high maximum power dissipation rating, this FET can handle significant power without overheating, ensuring reliability in demanding environments.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance enables the FET to operate reliably in a wide range of temperature conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and efficiency, making this FET suitable for applications requiring precision and reliability.

Technical Specifications

Power Field Effect Transistors (FET) IXTH80N20L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Littelfuse

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

2500 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

80 A

Maximum Drain Current (ID):

80 A

Maximum Drain-Source On Resistance:

.032 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

520 pF

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

340 A

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

IXTH80N20L Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20