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Littelfuse Power Field Effect Transistors (FET) 28

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IXTA02N250HVTRL by Littelfuse

IXTA02N250HVTRL

Littelfuse

The Littelfuse IXTA02N250HVTRL is a N-CHANNEL FET with 2500V DS Breakdown Voltage. It operates in Enhancement Mode, with 0.2A Drain Current and 450 ohm On Resistance. Ideal for high-voltage applications requiring low power dissipation and small outline package style.

DRAIN

SINGLE WITH BUILT-IN DIODE

2500 V

.2 A

.2 A

450 ohm

METAL-OXIDE SEMICONDUCTOR

3 pF

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

83 W

.6 A

YES

MATTE TIN

GULL WING

SINGLE

10

SILICON

IXTY14N60X2 by Littelfuse

IXTY14N60X2

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Minimum DS Breakdown Voltage: 600 V; Minimum Operating Temperature: -55 Cel;

AVALANCHE RATED

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

14 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

180 W

18 A

YES

MATTE TIN

GULL WING

SINGLE

10

SWITCHING

SILICON

IXTP14N60X2 by Littelfuse

IXTP14N60X2

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;

AVALANCHE RATED

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

14 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

18 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFT78N60X3HV by Littelfuse

IXFT78N60X3HV

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 780 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

AVALANCHE RATED

2200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

78 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

36 pF

TO-268AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

780 W

120 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

IXFH48N60X3 by Littelfuse

IXFH48N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;

AVALANCHE RATED

1400 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

48 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

18 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

520 W

68 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH60N60X3 by Littelfuse

IXFH60N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Pulsed Drain Current (IDM): 90 A; Maximum Drain-Source On Resistance: .051 ohm;

AVALANCHE RATED

1700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

60 A

.051 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

TO-220AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

625 W

90 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH78N60X3 by Littelfuse

IXFH78N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-247AD;

AVALANCHE RATED

2200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

78 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

36 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

780 W

120 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFT60N60X3HV by Littelfuse

IXFT60N60X3HV

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 625 W; Additional Features: AVALANCHE RATED; Avalanche Energy Rating (EAS): 1700 mJ;

AVALANCHE RATED

1700 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

60 A

.051 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

TO-268AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

625 W

90 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

IXFH98N60X3 by Littelfuse

IXFH98N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 600 V;

AVALANCHE RATED

2800 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

98 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

41 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

960 W

160 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFP36N60X3 by Littelfuse

IXFP36N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;

AVALANCHE RATED

750 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

36 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

3.6 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH36N60X3 by Littelfuse

IXFH36N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 750 mJ;

AVALANCHE RATED

750 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

36 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

3.6 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

LSIC1MO120G0080 by Littelfuse

LSIC1MO120G0080

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Feedback Capacitance (Crss): 9 pF; JESD-30 Code: R-PSFM-T4;

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

39 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

TO-247AD

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

214 W

80 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

LSIC1MO120G0120 by Littelfuse

LSIC1MO120G0120

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain-Source On Resistance: .15 ohm;

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

27 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

TO-247AD

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

156 W

60 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

LSIC1MO120G0160 by Littelfuse

LSIC1MO120G0160

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum DS Breakdown Voltage: 1200 V; Operating Mode: ENHANCEMENT MODE;

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

22 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

TO-247AD

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

45 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

LSIC1MO120G0025 by Littelfuse

LSIC1MO120G0025

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 1200 V; No. of Terminals: 4;

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

100 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

14 pF

TO-247AD

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

500 W

200 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

LSIC1MO120G0040 by Littelfuse

LSIC1MO120G0040

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Pulsed Drain Current (IDM): 130 A; Package Shape: RECTANGULAR;

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

70 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

13 pF

TO-247AD

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

357 W

130 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

IXTH220N20X4 by Littelfuse

IXTH220N20X4

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 800 W; Maximum Drain-Source On Resistance: .0055 ohm; Case Connection: DRAIN;

AVALANCHE RATED

900 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

220 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

5.4 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

800 W

400 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXTQ48N65X2M by Littelfuse

IXTQ48N65X2M

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

AVALANCHE RATED

1500 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

48 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

6.4 pF

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

70 W

70 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXTH94N20X4 by Littelfuse

IXTH94N20X4

Littelfuse

IXTH94N20X4 by Littelfuse is a N-CHANNEL FET with 200V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 360W power dissipation.

AVALANCHE RATED

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

94 A

.0106 ohm

METAL-OXIDE SEMICONDUCTOR

4 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

360 W

220 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXTQ34N65X2M by Littelfuse

IXTQ34N65X2M

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 43 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSFM-T3;

AVALANCHE RATED

1000 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

34 A

.096 ohm

METAL-OXIDE SEMICONDUCTOR

1.7 pF

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

43 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXTP60N20X4 by Littelfuse

IXTP60N20X4

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 350 mJ;

AVALANCHE RATED

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

60 A

.021 ohm

METAL-OXIDE SEMICONDUCTOR

.95 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

106 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXTH60N20X4 by Littelfuse

IXTH60N20X4

Littelfuse

IXTH60N20X4 by Littelfuse is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 106A IDM, 350mJ EAS, and 0.021 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 250W and can handle up to 60A ID.

AVALANCHE RATED

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

60 A

.021 ohm

METAL-OXIDE SEMICONDUCTOR

.95 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

106 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFP26N65X2 by Littelfuse

IXFP26N65X2

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

AVALANCHE RATED

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

26 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

1.2 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

460 W

36 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH26N65X2 by Littelfuse

IXFH26N65X2

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 460 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;

AVALANCHE RATED

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

26 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

1.2 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

460 W

36 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH70N65X3 by Littelfuse

IXFH70N65X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;

AVALANCHE RATED

2500 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

70 A

.044 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

780 W

110 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH34N65X3 by Littelfuse

IXFH34N65X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .1 ohm;

AVALANCHE RATED

750 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

34 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

2.6 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFN74N100X by Littelfuse

IXFN74N100X

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1170 W; Terminal Form: UNSPECIFIED; Transistor Application: SWITCHING;

AVALANCHE RATED

2000 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

1000 V

74 A

.066 ohm

METAL-OXIDE SEMICONDUCTOR

48 pF

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

1170 W

150 A

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON

IXFH46N65X3 by Littelfuse

IXFH46N65X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 18 pF;

AVALANCHE RATED

1200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

46 A

.073 ohm

METAL-OXIDE SEMICONDUCTOR

18 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

520 W

65 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON