Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
IXFH74N20P by Littelfuse is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 74A Max Drain Current, 0.034 ohm Max On Resistance, and 480W Power Dissipation. The PLASTIC/EPOXY package with SINGLE configuration and BUILT-IN DIODE makes it suitable for ENHANCEMENT MODE operation in various electronic systems.
Median Price
$5.900
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1k+
Arrow
1+ parts
$5.889
100+ parts
$4.139
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$3.813
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Chip1Stop
$5.910
$4.318
$3.815
Distrelec
$8.769
$7.633
Mouser Electronics
$9.940
$5.220
DigiKey
$10.510
$6.209
$4.573
$4.495
Verical
TTI
$4.290
$3.910
TTI Europe
$5.017
Nova Conductors
$5.260
Ozdisan Elektronik
$6.747
Bristol Electronics
$7.478
$3.515
TME
$8.800
$5.200
$4.640
Vyrian
IBS Electronics
$5.666
$6.452
NAC Semi
$6.510
ACDS - Activité Composants Distribution Service
Dan-Mar Components
Prism Electronics
Andel Nordic
$1.619
$1.554
Ampacity Inc.
$3.080
Continental Prestige Electronics
$5.155
Netroflash
Component Stockers USA
$6.380
$4.360
$3.760
Microchip USA
$21.868
QUARKTWIN TECHNOLOGY LTD
Authorized Procurement Solutions
Perfect Parts
Argo Parts USA
iodParts Technologies Inc.
GreenTree Electronics
The use of plastic/epoxy as the package body material makes the transistor lightweight and cost-effective.
The high minimum breakdown voltage makes this transistor suitable for applications where high voltage switching is required.
The high maximum pulsed drain current allows for efficient handling of high current loads.
With a high maximum power dissipation, this transistor can handle high power applications effectively.
The high maximum operating temperature ensures the transistor can operate in a wide range of environments without overheating.
The low drain-source on resistance results in lower power losses and improved efficiency in switching applications.
Power Field Effect Transistors (FET) IXFH74N20P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Littelfuse
Additional Features:
Avalanche Energy Rating (EAS):
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Configuration:
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Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
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Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
IXFH74N20P Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.
2N7002
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
2N2222A
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
BAV99
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADWG4
Texas Instruments
ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.
1N4148
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Rectron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
M24308/2-1F
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
M39029/56-351
Itt Cannon
CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;
Zetex Plc
Alpha & Omega Semiconductor
Taiwan Semiconductor
LM317D2TG
Onsemi
LM317D2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max output voltage of 37V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Microsemi
SIR872ADP-T1-GE3
Vishay Intertechnology's SIR872ADP-T1-GE3 is a N-channel FET with 150V DS breakdown voltage and 100A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.018 ohm max drain-source resistance, and operates in enhancement mode.
MCH3406-TL-E
MCH3406-TL-E by Onsemi is a N-CHANNEL FET with 3A max drain current and 1W max power dissipation. Ideal for applications requiring high efficiency in a single configuration, such as power management systems. Operating in enhancement mode, it can handle up to 150°C temperature with surface mount capability.
NTD5865NLT4G
NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.
FDD86102LZ
FDD86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 40A Pulsed Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and operates in ENHANCEMENT MODE. Suitable for surface mount, this transistor has a max power dissipation of 54W and can handle up to 8A Drain Current.
FDN5618P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
IRF530A
The Onsemi IRF530A is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 14A Max ID. Ideal for SWITCHING applications, it features a 0.11 ohm Drain-Source Resistance and operates in ENHANCEMENT MODE up to 175°C.
CSD19534Q5AT
CSD19534Q5AT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It is used for switching applications, has a max IDM of 137A and an EAS rating of 55mJ.
DMG6602SVT-7
Diodes Incorporated
DMG6602SVT-7 by Diodes Inc. is a Power FET with N/P-channel, 30V DS breakdown voltage, and 0.06 ohm max RDS(on). Ideal for switching applications, it features 2 elements in separate configuration with built-in diode. With 13A IDM and small outline package style, it operates at up to 150°C.
IRFZ44NLPBF
Infineon Technologies
IRFZ44NLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). Operating at up to 175°C, it has a power dissipation of 94W in an IN-LINE package.
IRLML6344TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
2N7002PS,115
NXP Semiconductors
2N7002PS,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.32A Max Drain Current and 0.99W Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
IRF7103TRPBF-1
Power Field-Effect Transistors;
IRF7401TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Pulsed Drain Current (IDM): 35 A;
SI7463ADP-T1-GE3
Vishay Intertechnology's SI7463ADP-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage and 70A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
IRF7205TRPBF
IRF7205TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 4.6A Drain Current, and 0.07 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE up to 150°C with GULL WING terminals.
AUIRF4905STRL
AUIRF4905STRL by Infineon is a P-CHANNEL FET for SWITCHING applications. It features 55V DS Breakdown Voltage, 280A IDM, and 0.02 ohm RDS(on). With a max power dissipation of 170W and operating temperature up to 150°C, it's ideal for high-power switching circuits in automotive and industrial electronics.
FDS8984
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Avalanche Energy Rating (EAS): 32 mJ; Package Shape: RECTANGULAR;
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
IRF9530NPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Maximum Drain-Source On Resistance: .2 ohm; Maximum Pulsed Drain Current (IDM): 56 A;
IRLML5203TRPBF
Infineon's IRLML5203TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 24A IDM, and 0.098 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it's ideal for power management in various electronic devices.
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IXFH12N100F
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Additional Features: AVALANCHE RATED; Terminal Finish: MATTE TIN;
Littelfuse
IXFH12N100F by Littelfuse is a N-CHANNEL FET with 1000V DS Breakdown Voltage, 48A IDM, and 1.05Ω RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-temp environments up to 150°C.
IXFH26N50P3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 500 V;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; No. of Elements: 1; JEDEC-95 Code: TO-247;
IXFH20N80P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .52 ohm; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Qualification: Not Qualified; JESD-30 Code: R-PSFM-T3;
IXFH10N100P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 500 mJ;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Maximum Pulsed Drain Current (IDM): 25 A; Minimum DS Breakdown Voltage: 1000 V;
IXFH26N50P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; No. of Terminals: 3; Terminal Position: SINGLE;
IXFH26N50P by Littelfuse is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 26A Max Drain Current, 0.23 ohm Max On Resistance, and 78A Pulsed Drain Current. Suitable for ENHANCEMENT MODE operation in various power electronics systems.
IXFH80N65X2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 890 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: MATTE TIN;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 890 W; Maximum Pulsed Drain Current (IDM): 160 A; Terminal Form: THROUGH-HOLE;
IXFH74N20P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 480 W; Terminal Form: THROUGH-HOLE; Additional Features: AVALANCHE RATED;
IXFH16N80P
The Littelfuse IXFH16N80P is a power FET with a min DS breakdown voltage of 800V. It is an N-channel transistor used for switching applications, with a max drain current of 16A and a max drain-source on resistance of 0.6 ohm.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 16 A;
IXFH69N30P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Pulsed Drain Current (IDM): 200 A; Additional Features: AVALANCHE RATED;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
IXFH14N80P
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Form: THROUGH-HOLE;
IXFH74N20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Qualification: Not Qualified; No. of Terminals: 3;
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