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IXYH20N120C3D1

IXYS Corporation

IXYH20N120C3D1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 36 A; Case Connection: COLLECTOR;

Median Price

$10.900

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 294 parts In-Stock

1+ parts

$10.860

100+ parts

$6.490

1k+ parts

$5.150

10k+ parts

-

294

$10.860

$6.490

$5.150

-

DigiKey

USA . 300 parts In-Stock

1+ parts

$10.900

100+ parts

$6.499

1k+ parts

$5.154

10k+ parts

-

300

$10.900

$6.499

$5.154

-

Verical

USA . 281 parts In-Stock

1+ parts

-

100+ parts

$11.074

1k+ parts

-

10k+ parts

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281

-

$11.074

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 281 parts In-Stock

1+ parts

$10.020

100+ parts

$8.680

1k+ parts

$8.350

10k+ parts

-

281

$10.020

$8.680

$8.350

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.687

100+ parts

$1.535

1k+ parts

$1.383

10k+ parts

-

5,000

$1.687

$1.535

$1.383

-

Component Stockers USA

USA . 787 parts In-Stock

1+ parts

$12.040

100+ parts

$9.000

1k+ parts

-

10k+ parts

-

787

$12.040

$9.000

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Microchip USA

USA . 6,885 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,885

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-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,000

-

-

-

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Perfect Parts

USA . 560 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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560

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYH20N120C3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

220 ns

Nominal Turn On Time (ton):

60 ns

Trade Compliance

IXYH20N120C3D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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