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IXXN200N60C3H1

IXYS Corporation

IXXN200N60C3H1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Maximum Collector Current (IC): 200 A; No. of Terminals: 4;

Median Price

$32.355

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 70 parts In-Stock

1+ parts

-

100+ parts

$32.355

1k+ parts

$32.355

10k+ parts

$32.355

70

-

$32.355

$32.355

$32.355

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 256 parts In-Stock

1+ parts

$116.723

100+ parts

-

1k+ parts

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10k+ parts

-

256

$116.723

-

-

-

Component Stockers USA

USA . 386 parts In-Stock

1+ parts

-

100+ parts

$37.340

1k+ parts

-

10k+ parts

-

386

-

$37.340

-

-

Authorized Procurement Solutions

USA . 100 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

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100

-

-

-

-

Perfect Parts

USA . 9 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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9

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iodParts Technologies Inc.

India . 8 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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8

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXN200N60C3H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

240 ns

Nominal Turn On Time (ton):

143 ns

Maximum VCEsat:

2.1 V

Trade Compliance

IXXN200N60C3H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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