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IXTP60N10T

IXYS Corporation

IXTP60N10T by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (Abs) (ID): 60 A; Transistor Element Material: SILICON;

Median Price

$2.500

Lifecycle Status

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11

In-Stock Inventory

1k+

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Newark

USA . 33 parts In-Stock

1+ parts

$1.660

100+ parts

$1.300

1k+ parts

$1.160

10k+ parts

$1.110

33

$1.660

$1.300

$1.160

$1.110

Farnell

UK . 49 parts In-Stock

1+ parts

$2.340

100+ parts

$1.540

1k+ parts

$1.110

10k+ parts

$1.010

49

$2.340

$1.540

$1.110

$1.010

DigiKey

USA . 45 parts In-Stock

1+ parts

$2.660

100+ parts

$1.244

1k+ parts

$1.182

10k+ parts

$1.135

45

$2.660

$1.244

$1.182

$1.135

Mouser Electronics

USA . 45 parts In-Stock

1+ parts

$2.660

100+ parts

$1.240

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$1.130

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-

45

$2.660

$1.240

$1.130

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Arrow

USA . 50 parts In-Stock

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$3.111

100+ parts

$1.456

1k+ parts

$1.383

10k+ parts

$1.328

50

$3.111

$1.456

$1.383

$1.328

Element14

Singapore . 49 parts In-Stock

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$3.810

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$2.450

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$1.730

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-

49

$3.810

$2.450

$1.730

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TTI

USA . 300 parts In-Stock

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$1.230

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$1.200

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300

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$1.230

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Verical

USA . 298 parts In-Stock

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$1.577

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298

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$1.577

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Ozdisan Elektronik

Türkiye . 330 parts In-Stock

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$1.960

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330

$1.960

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TME

Poland . 298 parts In-Stock

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$2.300

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$1.410

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NAC Semi

USA . 230 parts In-Stock

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$3.320

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$3.060

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230

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$3.060

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Component Stockers USA

USA . 887 parts In-Stock

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$1.640

100+ parts

$1.440

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887

$1.640

$1.440

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Continental Prestige Electronics

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$2.400

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$1.730

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$1.180

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79

$2.400

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$1.180

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Andel Nordic

Denmark . 411 parts In-Stock

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$9.437

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$9.060

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$9.060

411

$9.437

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$9.060

$9.060

Microchip USA

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$18.265

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$18.265

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Perfect Parts

USA . 1,852 parts In-Stock

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Authorized Procurement Solutions

USA . 497 parts In-Stock

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497

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GreenTree Electronics

Israel . 374 parts In-Stock

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374

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Technical Specifications

Power Field Effect Transistors (FET) IXTP60N10T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

500 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

60 A

Maximum Drain Current (ID):

60 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

180 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTP60N10T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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