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IRLR3410TR

International Rectifier

IRLR3410TR by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;

Median Price

$0.950

Lifecycle Status

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5

In-Stock Inventory

1k+

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DigiKey

USA . 2,200 parts In-Stock

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$0.950

100+ parts

$0.387

1k+ parts

$0.269

10k+ parts

$0.208

2,200

$0.950

$0.387

$0.269

$0.208

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Chip Stock

USA . 27,540 parts In-Stock

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27,540

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PC Components Company LLC

USA . 2,905 parts In-Stock

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2,905

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Bristol Electronics

USA . 2,628 parts In-Stock

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Prism Electronics

USA . 25 parts In-Stock

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25

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Perfect Parts

USA . 24,838 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) IRLR3410TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

150 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

17 A

Maximum Drain-Source On Resistance:

.125 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

60 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRLR3410TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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