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IRGP4650DPBF

International Rectifier

IRGP4650DPBF by International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 76 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;

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Digiode

USA . 991 parts In-Stock

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Vyrian

USA . 647 parts In-Stock

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

USA . 85 parts In-Stock

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Modulus Dynamics

Lithuania . 18,670 parts In-Stock

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$1.185

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Perfect Parts

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Corphita

USA . 584 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Microchip USA

USA . 207 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGP4650DPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

54 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

42 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Trade Compliance

IRGP4650DPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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