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IRGP4263-EPBF

International Rectifier

IRGP4263-EPBF by International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 90 A; Maximum Rise Time (tr): 80 ns; Maximum Gate-Emitter Threshold Voltage: 7.7 V;

Median Price

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Lifecycle Status

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5

In-Stock Inventory

< 1k

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Digiode

USA . 233 parts In-Stock

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Vyrian

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Connector Distribution Corp

USA . 100 parts In-Stock

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Right Parts Inc.

USA . 100 parts In-Stock

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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Modulus Dynamics

Lithuania . 5,172 parts In-Stock

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$1.812

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$1.737

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,855 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,903 parts In-Stock

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Microchip USA

USA . 1,734 parts In-Stock

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Corphita

USA . 904 parts In-Stock

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Perfect Parts

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGP4263-EPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Fall Time (tf):

50 ns

Maximum Gate-Emitter Threshold Voltage:

7.7 V

Maximum Gate-Emitter Voltage:

20 V

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

80 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Trade Compliance

IRGP4263-EPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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