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IRGIH50FUPBF

International Rectifier

IRGIH50FUPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Terminal Form: PIN/PEG; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 362 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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362

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Vyrian

USA . 40 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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40

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 17,507 parts In-Stock

1+ parts

$1.504

100+ parts

$1.444

1k+ parts

$1.384

10k+ parts

-

17,507

$1.504

$1.444

$1.384

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Corphita

USA . 334 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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334

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGIH50FUPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

FAST

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-259AA

JESD-30 Code:

R-MSFM-P3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

200 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Maximum VCEsat:

2.9 V

Trade Compliance

IRGIH50FUPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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