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IRFZ44SPBF

International Rectifier

IRFZ44SPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;

Median Price

$2.745

Lifecycle Status

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8

In-Stock Inventory

1k+

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Arrow

USA . 539 parts In-Stock

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$1.009

100+ parts

$0.881

1k+ parts

$0.825

10k+ parts

$0.810

539

$1.009

$0.881

$0.825

$0.810

Chip1Stop

Japan . 3,666 parts In-Stock

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$2.745

100+ parts

$1.426

1k+ parts

$1.220

10k+ parts

-

3,666

$2.745

$1.426

$1.220

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DigiKey

USA . 1,000 parts In-Stock

1+ parts

$3.490

100+ parts

$1.586

1k+ parts

$1.197

10k+ parts

$1.124

1,000

$3.490

$1.586

$1.197

$1.124

Mouser Electronics

USA . 914 parts In-Stock

1+ parts

$3.880

100+ parts

$1.740

1k+ parts

$1.310

10k+ parts

-

914

$3.880

$1.740

$1.310

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Verical

USA . 539 parts In-Stock

1+ parts

-

100+ parts

$0.881

1k+ parts

$0.825

10k+ parts

$0.810

539

-

$0.881

$0.825

$0.810

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Vyrian

USA . 49,273 parts In-Stock

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$1.452

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$1.452

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Chip Stock

USA . 425 parts In-Stock

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425

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Cogito LLC

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Component Stockers USA

USA . 4,579 parts In-Stock

1+ parts

$1.760

100+ parts

$1.440

1k+ parts

$1.240

10k+ parts

-

4,579

$1.760

$1.440

$1.240

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Microchip USA

USA . 8,455 parts In-Stock

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$18.070

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8,455

$18.070

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Perfect Parts

USA . 2,903 parts In-Stock

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2,903

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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1,965

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Technical Specifications

Power Field Effect Transistors (FET) IRFZ44SPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

50 A

Maximum Drain Current (ID):

50 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

150 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFZ44SPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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