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IRFS4010TRRPBF

International Rectifier

IRFS4010TRRPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (Abs) (ID): 180 A;

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Chip Stock

USA . 41,870 parts In-Stock

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Vyrian

USA . 528 parts In-Stock

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Digiode

USA . 460 parts In-Stock

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460

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Modulus Dynamics

Lithuania . 8,387 parts In-Stock

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$0.937

100+ parts

$0.900

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$0.862

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8,387

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A-Z Elektronik GmbH

Germany . 5,616 parts In-Stock

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Alle Elektronik GmbH

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Corphita

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533

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Microchip USA

USA . 500 parts In-Stock

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500

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Perfect Parts

USA . 336 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) IRFS4010TRRPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

318 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

180 A

Maximum Drain Current (ID):

180 A

Maximum Drain-Source On Resistance:

.0047 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

720 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFS4010TRRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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