Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IRF7751PBF by International Rectifier is a P-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. Features include 30V DS Breakdown Voltage, 4.5A Drain Current, and 0.035 ohm On Resistance. It operates in ENHANCEMENT MODE with a max temperature of 150°C, making it suitable for various electronic devices.
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This material provides a durable and lightweight package for easy handling and protection of the transistors.
P-channel transistors offer low resistance and high efficiency, making them ideal for switching applications.
This configuration allows for separate control of each element with added functionality of a built-in diode for protection.
Designed specifically for switching applications, ensuring fast and efficient operation.
The surface mount option makes for easy installation and space-saving on PCBs.
With a high breakdown voltage of 30V, this transistor can handle higher voltages without damage.
The rectangular shape allows for easy placement on PCBs and efficient use of space.
Gull wing terminals provide a secure connection and enhanced heat dissipation for optimal performance.
Enhancement mode operation offers improved control and efficiency in various applications.
With 2 elements, this transistor offers versatility and flexibility for different circuit configurations.
The high maximum drain current rating of 4.5A allows for reliable operation in high-current circuits.
With 8 terminals, this transistor offers multiple connection options for various circuit designs.
The high maximum power dissipation rating of 1W ensures stable performance under heavy load conditions.
The small outline package style is compact and space-saving while providing excellent thermal properties.
MOSFET technology offers high efficiency and fast switching speeds for optimal performance.
With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.
Silicon is a reliable and widely used material for transistors, ensuring long-term durability and stability.
Matte tin terminal finish provides a reliable and low-resistance connection for improved performance.
The low drain-source on resistance of 0.035 ohm minimizes power loss and heat generation for efficient operation.
Dual terminal position offers flexibility in circuit layout and connection options.
MSL 2 rating indicates moderate sensitivity to moisture, suitable for most indoor environments.
With a maximum time at peak reflow temperature of 30 seconds, this transistor is easy to solder and install.
The high peak reflow temperature of 260°C ensures reliable soldering and durability in harsh environments.
Small Signal Field Effect Transistors (FET) IRF7751PBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
IRF7751PBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
BSS138
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
MBR1560CT
General Instrument
MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.
SMBJ18CA
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
BAV99
Infinex
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Promax-johnton
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
AT90CAN128-16AUR
AT90CAN128-16AUR by Microchip: 16 MHz clock, 8-bit data RAM, and 131072 ROM words. Ideal for industrial applications with CAN, SPI, TWI connectivity and low power mode. Contains 4 timers, 8 ADC channels, and supports up to 10-bit analog to digital conversion.
SS14
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
2N7002
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
1N4148
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Semtech Electronics
BAT54SLT1G
Onsemi
BAT54SLT1G by Onsemi is a fast recovery Schottky diode with 2 elements in series connected configuration. It has a max reverse recovery time of 0.005 us and a max forward voltage of 0.8 V. Ideal for applications requiring high-speed rectification, it operates b/w -55 to 150 °C and can handle a max output current of 0.2 A.
JANTX2N6796
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: METAL; Reference Standard: MIL-19500; Terminal Form: WIRE;
ZVN3306FTA
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .15 A; Maximum Drain-Source On Resistance: 5 ohm;
2N7002KW
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS83PH6327
Infineon Technologies
BSS83PH6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage. It features a single configuration with built-in diode, 0.33A max drain current, and 3 ohm max on resistance. Ideal for small outline applications requiring low power dissipation and high operating temperatures up to 150°C.
FDV303N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
NDS0605
NDS0605 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage and 0.18A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.36W. The small outline package with gull wing terminals makes it suitable for surface mount designs.
SI2356DS-T1-GE3
Vishay Intertechnology
SI2356DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 4.3A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.051 ohm on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
2N7000BU
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;
FDV301N-NB9V005
FDV301N-NB9V005 by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.5A Drain Current, and 4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with -55 to 150 °C operating temperature range.
2N7002W
Onsemi's 2N7002W is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package includes GULL WING terminals in a RECTANGULAR shape for surface mount assembly at temperatures up to 150°C.
NDS351AN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 1.2 A; Transistor Element Material: SILICON;
MMBFJ177LT1G
MMBFJ177LT1G by Onsemi is a P-CHANNEL FET in PLASTIC/EPOXY package. It operates in DEPLETION MODE with 300 ohm RDS(on) and 5.5 pF Crss, ideal for CHOPPER applications. This SMALL OUTLINE transistor has a max temp of 150°C, making it suitable for various electronic devices.
BSS138BK
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .36 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260;
LND150N3-GP002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): CYLINDRICAL; Maximum Drain-Source On Resistance: 1000 ohm;
BSS126H6327XTSA2
BSS126H6327XTSA2 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. It features a built-in diode, operates in depletion mode, and has a max ID of 0.021A. Ideal for applications requiring low feedback capacitance like signal amplification circuits.
BSS123_R1_00001
Panjit International
Panjit International's BSS123_R1_00001 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has GULL WING terminals and matte tin finish.
FDC6506P
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; No. of Terminals: 6; Qualification: Not Qualified;
FDG6301N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
SQ2361AEES-T1-GE3
Vishay Intertechnology's SQ2361AEES-T1-GE3 is a P-channel FET with 60V DS breakdown voltage and 2.8A max drain current. Ideal for small outline applications, it features 0.17 ohm max on-resistance and 45pF feedback capacitance, meeting AEC-Q101 standards for automotive use.
2N7002DW-TP
2N7002DW-TP by Micro Commercial Components is a N-channel FET with 60V breakdown voltage and 0.34A drain current. It features separate elements with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.2W. Ideal for small signal applications requiring low on-resistance and high-speed switching capabilities.
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IRF7820TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;
IRF7820TRPBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It has 3.7A Drain Current, 0.078 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor in GULL WING package is designed for ENHANCEMENT MODE operation.
IRF7855TRPBF
IRF7855TRPBF by Infineon Technologies is a N-CHANNEL FET with 60V DS Breakdown Voltage and 97A IDM. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 2.5W.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Peak Reflow Temperature (C): 260; Package Body Material: PLASTIC/EPOXY;
IRF7821TRPBF-1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
IRF7821TRPBF-1 by Infineon: N-CHANNEL FET, 13.6A ID, 2.5W Pd. Ideal for small signal applications requiring high drain current up to 155°C operating temperature. Suitable for surface mount configurations in various electronic devices.
IRF7329TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 9.2 A; Terminal Position: DUAL;
IRF7329TRPBF by Infineon is a P-CHANNEL FET with 2 elements and built-in diode. It operates in enhancement mode for switching applications, with max drain current of 9.2A and min DS breakdown voltage of 12V. This small outline transistor has a max operating temp of 150°C, making it suitable for various electronic devices.
IRF7241TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 25 A;
Infineon's IRF7241TRPBF is a P-CHANNEL FET with 6.2A max drain current and 2.5W power dissipation, ideal for switching applications. It features a built-in diode, operates at up to 150°C, and comes in a small outline package with gull wing terminals for surface mount assembly.
IRF7478TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: MS-012AA;
IRF7478TRPBF by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM, 140mJ EAS, and 0.026 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it operates b/w -55 to 150 °C.
IRF7478TRPBF-1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 7 A; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
IRF7450PBF
Small Signal Field-Effect Transistors; Maximum Drain Current (Abs) (ID): 2.5 A; Maximum Pulsed Drain Current (IDM): 20 A; Qualification: Not Qualified; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 230 mJ;
IRF7509TRPBF
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON; Terminal Position: DUAL;
Infineon's IRF7509TRPBF is a Small Signal FET with N- and P-channel types. It features 2 elements with built-in diode, ideal for switching applications. With a max drain current of 2.7A and low on-resistance of 0.11Ω, it operates in enhancement mode for efficient performance in various electronic circuits.
IRF7103QPBF
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 175 Cel;
IRF7807VTRPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 8.3 A; Moisture Sensitivity Level (MSL): 1;
IRF7811AVTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (Abs) (ID): 10.8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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