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IRF7103Q

International Rectifier

IRF7103Q by International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Drain Current (ID): 3 A; Moisture Sensitivity Level (MSL): 1;

Median Price

$11.231

Lifecycle Status

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5

In-Stock Inventory

1k+

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Freelance Electronics

USA . 14 parts In-Stock

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$11.231

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$11.793

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Bristol Electronics

USA . 5,658 parts In-Stock

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Atlantic Semiconductor

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Sogenti Electronics

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Component Stockers USA

USA . 442 parts In-Stock

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$99.990

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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RC Electronics

USA . 3,960 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,759 parts In-Stock

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Alle Elektronik GmbH

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRF7103Q attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

22 mJ

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

3 A

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

25 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF7103Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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