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IRF5852TRPBF

International Rectifier

IRF5852TRPBF by International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Terminal Position: DUAL; Qualification: Not Qualified;

Median Price

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Lifecycle Status

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8

In-Stock Inventory

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Sea View Technologies

USA . 1,808 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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QIE Inc.

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Zilex Electronics Inc.

Canada . 100 parts In-Stock

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Cogito LLC

Ukraine . 88 parts In-Stock

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Sunrise Surplus Inc.

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Component Electronics Inc.

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Kepictronics

USA . 33,000 parts In-Stock

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Authorized Procurement Solutions

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

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Glotronic Ltd.

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Microchip USA

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRF5852TRPBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.7 A

Maximum Drain Current (ID):

2.7 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

2

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF5852TRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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