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IRF5852

International Rectifier

IRF5852 by International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .09 ohm;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Sunrise Surplus Inc.

USA . 845 parts In-Stock

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845

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NPI Materials, Inc.

USA . 492 parts In-Stock

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492

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Cogito LLC

Ukraine . 48 parts In-Stock

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48

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Glotronic Ltd.

UK . 1,965 parts In-Stock

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1,965

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRF5852 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2.7 A

Maximum Drain Current (ID):

2.7 A

Maximum Drain-Source On Resistance:

.09 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

2

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF5852 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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