Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
IRF4905STRL by International Rectifier is a P-CHANNEL FET for SWITCHING applications. It has a 55V DS Breakdown Voltage, 260A IDM, and 0.02 ohm RDS(on). With a 150W power dissipation and operating up to 175°C, it's ideal for high-power circuits requiring efficient switching capabilities.
Median Price
$2.340
Lifecycle Status
Suppliers In-Stock
7
In-Stock Inventory
1k+
DigiKey
1+ parts
100+ parts
$1.021
1k+ parts
$0.751
10k+ parts
$0.650
Bristol Electronics
$2.100
$1.302
$1.050
-
Chip Stock
Pegasus Components GmbH
Vyrian
ACDS - Activité Composants Distribution Service
Nova Conductors
Aztec Data Supply Inc.
$0.470
Corohmni
$0.785
Advanced Electronics
$1.668
$1.584
Ampacity Inc.
$1.990
RC Electronics
A-Z Elektronik GmbH
Alle Elektronik GmbH
Perfect Parts
Continental Prestige Electronics
Argo Parts USA
Cyclops Electronics Ltd (Excess)
Bastille Electronics
Robosynatics
Lucentia Tech
$2.537
Glotronic Ltd.
Plastic/epoxy package body material provides durability and protection for the transistor, ensuring reliable performance in various environments.
P-channel type transistors are known for their high efficiency and low power consumption, making this product suitable for energy-efficient applications.
Designed for switching applications, this FET offers fast response times and efficient operation, making it ideal for high-speed circuit switching.
The high breakdown voltage of 55V ensures the transistor can handle higher voltages without breakdown, providing a reliable performance in demanding applications.
With a high maximum pulsed drain current rating of 260A, this FET can handle large currents efficiently, making it suitable for high-power applications.
The high avalanche energy rating of 930mJ indicates the transistor can withstand high-energy transients, ensuring long-term reliability in harsh operating conditions.
With a maximum power dissipation rating of 150W, this transistor can handle high power levels without overheating, ensuring reliable performance under heavy loads.
Power Field Effect Transistors (FET) IRF4905STRL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier
Additional Features:
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Pulsed Drain Current (IDM):
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
IRF4905STRL Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
1N4148
Rectron
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OPA2277UA/2K5
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
NE555D
Philips Semiconductors
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
SMBJ18CA
Onsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
Yangzhou Yangjie Electronics
KYOCERA AVX
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LL4148
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
TM4C1294NCPDTI3
TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.
BAV99
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
2N7002W
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e0; No. of Elements: 1;
2N7002BKW,115
NXP Semiconductors
2N7002BKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.31A and power dissipation of 0.88W. It operates in enhancement mode, suitable for applications requiring a single configuration such as power management systems or voltage regulators.
FDN5618P_NL
Fairchild Semiconductor's FDN5618P_NL is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 1.25A and 0.17 ohm On Resistance. The transistor operates in ENHANCEMENT MODE, has a Max Power Dissipation of 0.5W, and can handle up to 10A Pulsed Drain Current.
IRFR9120NTRPBF
Infineon Technologies
IRFR9120NTRPBF by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage and 26A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 40W, this MOSFET has a drain-source on resistance of 0.48 ohm and can handle up to 6.6A ID.
IRF7404TRPBF
IRF7404TRPBF by Infineon is a P-CHANNEL FET with 20V DS Breakdown Voltage and 27A IDM. Ideal for power applications, it features a single configuration with built-in diode, small outline package style, and -55 to 150 °C operating temperature range.
FDS6680A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
IRFS7530TRL7PP
Infineon's IRFS7530TRL7PP is a N-CHANNEL FET with 60V DS Breakdown Voltage, 240A ID, and 0.0014 ohm RDS(on). Ideal for power applications, it offers 375W Pd max, operates up to 175°C, and features MOSFET technology. Suitable for surface mount designs with matte tin finish.
FDD6685
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
FDB33N25TM
FDB33N25TM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 33A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 132A Pulsed Drain Current, and 0.094 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 235W in a small outline package style.
IRLML0040TRPBF
Infineon's IRLML0040TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15A IDM, 3.6A ID, and 0.056 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it offers high performance in compact designs.
IRF9540PBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 19 A;
FDD4243
The Onsemi FDD4243 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, 60A IDM, and 0.064 ohm RDS. Ideal for power management applications due to its high current handling capability and low on-resistance. Suitable for use in various electronic devices requiring efficient power control in compact designs.
CSD19534Q5A
CSD19534Q5A by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 137A IDM, and 0.0176 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching circuits in various electronic devices.
Vishay Intertechnology's IRF9540PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W, -55 to 175°C operating temperature range, and 0.2 ohm Drain-Source On Resistance.
IRLL110TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Additional Features: LOGIC LEVEL COMPATIBLE;
IRF7420TRPBF
IRF7420TRPBF by Infineon is a P-CHANNEL FET with 12V DS Breakdown Voltage and 46A IDM. Ideal for SWITCHING applications, it has a single configuration with built-in diode in a small outline package. Operating from -55 to 150 °C, it offers 0.014 ohm Drain-Source On Resistance and 2.5W Power Dissipation.
IRF640
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;
AUIRF5210STRL
AUIRF5210STRL by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling 140A pulsed drain current and dissipating up to 170W power. This MOSFET operates in enhancement mode at temperatures up to 150°C, making it suitable for automotive and industrial use.
FDB035N10A
FDB035N10A by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 120A Max Drain Current, 0.0035 ohm Max RDS(on), and 333W Max Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a built-in DIODE, suitable for high-power requirements.
IRLML5203TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
IRF4905STRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Terminal Finish: MATTE TIN OVER NICKEL; Terminal Position: SINGLE;
IRF4905STRLPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, 280A IDM, and 0.02 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE at -55 to 150 °C, with 170W power dissipation.
IRF4905PBF
IRF4905PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage and 260A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in the temperature range of -55 to 175°C.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSFM-T3; Operating Mode: ENHANCEMENT MODE;
IRF4905STRL
International Rectifier Hirel Products
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
IRF4905STRR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; Terminal Form: GULL WING;
IRF4905STRR by International Rectifier is a P-CHANNEL Power FET with 55V DS Breakdown Voltage and 260A IDM. Ideal for SWITCHING applications, it features a 0.02 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 175°C.
IRF4905LPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (ID): 42 A; Qualification: Not Qualified;
IRF4905LPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 280A IDM, 140mJ EAS, and 0.02 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 170W at 150°C.
IRF4905SHR
IRF4905SHR by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.02 ohm RDS(on), suitable for high-power operations. The transistor's GULL WING terminals and ENHANCEMENT MODE operation make it efficient for various power electronics designs.
IRF4905SPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 2;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
IRF4905STRLHR
IRF4905STRLHR by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 260A IDM and 0.02ohm RDS(on). Its METAL-OXIDE SEMICONDUCTOR technology ensures high performance in ENHANCEMENT MODE operation.
IRF4104SPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY;
IRF4104SPBF by Infineon is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 470A IDM, 220mJ EAS, and 0.0055 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and can handle up to 140W power dissipation.
IRF431
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Drain Current (Abs) (ID): 4.5 A; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Drain Current (ID): 4.5 A; No. of Elements: 1;
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: Tin/Lead (Sn/Pb);
New Jersey Semiconductor Products
N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 450 V; Maximum Drain Current (ID): 4.5 A; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF4905STRRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: HIGH RELIABILITY, AVALANCHE RATED; Package Style (Meter): SMALL OUTLINE;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved