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IRF4905SHR

International Rectifier

IRF4905SHR by International Rectifier

IRF4905SHR by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.02 ohm RDS(on), suitable for high-power operations. The transistor's GULL WING terminals and ENHANCEMENT MODE operation make it efficient for various power electronics designs.

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Overview

Unlock the power of cutting-edge technology with the IRF4905SHR by International Rectifier. As a leading manufacturer in the industry, International Rectifier delivers top-notch quality and reliability. The IRF4905SHR is a P-CHANNEL Power Field Effect Transistor designed for switching applications, offering exceptional performance with a maximum drain current of 74 A and a low on-resistance of 0.02 ohm. Whether you're looking to optimize power management or enhance circuit efficiency, this transistor has got you covered. Say goodbye to limitations and hello to limitless possibilities with the IRF4905SHR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides protection for the internal components.

Polarity or Channel Type: P-CHANNEL

Allows for efficient control of power flow in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by combining components.

Transistor Application: SWITCHING

Designed for fast switching applications with minimal power loss.

Surface Mount: YES

Easily mountable on a PCB for streamlined production processes.

Minimum DS Breakdown Voltage: 55 V

Suitable for applications requiring high voltage handling capabilities.

Package Shape: RECTANGULAR

Fits well in standard PCB layouts and allows for efficient use of space.

Terminal Form: GULL WING

Facilitates easy soldering and provides a secure connection to the PCB.

Operating Mode: ENHANCEMENT MODE

Enhances control over power flow and allows for efficient operation.

Maximum Pulsed Drain Current (IDM): 260 A

Capable of handling high current pulses without compromising performance.

Avalanche Energy Rating (EAS): 930 mJ

Designed to withstand high-energy transients and protect the circuit.

No. of Terminals: 2

Simplifies connection and installation in the circuit.

Package Style (Meter): SMALL OUTLINE

Compact package design that saves space on the PCB.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable technology that ensures stable and efficient transistor operation.

Transistor Element Material: SILICON

High-quality material known for its reliability and performance in electronic components.

Terminal Finish: TIN LEAD

Provides a secure connection and enhances soldering quality.

Maximum Drain Current (ID): 74 A

Capable of handling high continuous current for reliable operation.

Maximum Drain-Source On Resistance: 0.02 ohm

Low on-resistance that minimizes power loss and ensures efficiency.

Terminal Position: SINGLE

Simplifies installation and connection in the circuit.

Case Connection: DRAIN

Standard connection point for easy integration into the circuit.

Technical Specifications

Power Field Effect Transistors (FET) IRF4905SHR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Avalanche Energy Rating (EAS):

930 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (ID):

74 A

Maximum Drain-Source On Resistance:

.02 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

260 A

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF4905SHR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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