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CPV364M4KPBF

International Rectifier

CPV364M4KPBF by International Rectifier

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Collector Current (IC): 24 A; Nominal Turn Off Time (toff): 250 ns;

Median Price

$61.808

Lifecycle Status

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4

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1k+

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Ozdisan Elektronik

Türkiye . 7 parts In-Stock

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$61.808

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7

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Vyrian

USA . 80,779 parts In-Stock

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80,779

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Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

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10

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Q Components

USA . 5 parts In-Stock

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5

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A-Z Elektronik GmbH

Germany . 6,854 parts In-Stock

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6,854

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Alle Elektronik GmbH

Germany . 4,569 parts In-Stock

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4,569

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CPV364M4KPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

ULTRA FAST SOFT

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T13

No. of Elements:

6

No. of Terminals:

13

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

250 ns

Nominal Turn On Time (ton):

47 ns

Maximum VCEsat:

2.3 V

Trade Compliance

CPV364M4KPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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