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CPV363MU

International Rectifier

CPV363MU by International Rectifier

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 13 A; No. of Elements: 6;

Median Price

-

Lifecycle Status

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In-Stock Inventory

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551

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USA . 47 parts In-Stock

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47

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Native Components

USA . 859 parts In-Stock

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$0.083

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$0.080

859

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$0.080

Northwest PG Solutions

USA . 1,009 parts In-Stock

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$0.092

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$0.092

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$0.081

Modulus Dynamics

Lithuania . 494 parts In-Stock

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$0.393

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$0.377

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$0.362

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494

$0.393

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Corphita

USA . 165 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CPV363MU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

ULTRA FAST

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T13

JESD-609 Code:

e0

No. of Elements:

6

No. of Terminals:

13

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

36 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.4 V

Trade Compliance

CPV363MU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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