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CPV362MM

International Rectifier

CPV362MM by International Rectifier

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 7.9 A; Maximum Gate-Emitter Voltage: 20 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Resion

USA . 80 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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80

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-

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-

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CPV362MM attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

SHORT CIRCUIT RATED

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T13

JESD-609 Code:

e0

No. of Elements:

6

No. of Terminals:

13

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

23 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

3.3 V

Trade Compliance

CPV362MM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

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