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IS43TR16128DL-125KBL

Integrated Silicon Solution

IS43TR16128DL-125KBL by Integrated Silicon Solution

IS43TR16128DL-125KBL by Integrated Silicon Solution is a 128MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.

Median Price

$4.730

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 1,059 parts In-Stock

1+ parts

$4.730

100+ parts

$3.908

1k+ parts

$3.316

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1,059

$4.730

$3.908

$3.316

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Mouser Electronics

USA . 3,139 parts In-Stock

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$12.780

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$10.740

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$12.780

$10.740

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Newark

USA . 185 parts In-Stock

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$14.290

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$14.290

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Verical

USA . 1,140 parts In-Stock

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$3.309

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Arrow

USA . 1,140 parts In-Stock

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$3.309

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Chip Stock

USA . 18,500 parts In-Stock

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NAC Semi

USA . 195 parts In-Stock

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$5.430

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Distributors (Availability)

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QUARKTWIN TECHNOLOGY LTD

USA . 21,696 parts In-Stock

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Lixinc

USA . 18,923 parts In-Stock

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Futuretech Components

Singapore . 4,000 parts In-Stock

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4,000

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GreenTree Electronics

Israel . 3,135 parts In-Stock

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Eastek

USA . 1,635 parts In-Stock

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Perfect Parts

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Kepictronics

USA . 175 parts In-Stock

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Authorized Procurement Solutions

USA . 55 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the IS43TR16128DL-125KBL by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers cutting-edge DRAM technology that is ideal for a wide range of applications. With its synchronous operation and self-refresh capabilities, this memory module offers seamless functionality and efficiency. The compact package design and common input/output type make it easy to integrate into your system. Upgrade your device today with the IS43TR16128DL-125KBL and enjoy enhanced speed, stability, and overall performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the DRAM, ensuring reliability in various conditions.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination between memory and processor, leading to efficient data transfer.

Maximum Clock Frequency (fCLK): 800 MHz

High clock frequency enables fast data processing and retrieval, making the DRAM ideal for applications requiring quick response times.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the energy efficiency and reliability of the DRAM.

Memory IC Type: DDR3L DRAM

DDR3L DRAM technology provides improved performance and power efficiency compared to earlier versions, ensuring optimal operation of the memory module.

Technical Specifications

DRAM IS43TR16128DL-125KBL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B96

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.016 Amp

Minimum Standby Voltage:

1.283 V

Maximum Supply Current:

191 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

9 mm

Trade Compliance

IS43TR16128DL-125KBL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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