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IS42S16800F-6BL

Integrated Silicon Solution

IS42S16800F-6BL by Integrated Silicon Solution

IS42S16800F-6BL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 4096 refresh cycles, and supports four bank page burst access mode. Ideal for applications requiring high-speed memory performance in commercial temperature environments.

Median Price

$3.590

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 526 parts In-Stock

1+ parts

$3.590

100+ parts

$2.840

1k+ parts

$2.510

10k+ parts

$2.300

526

$3.590

$2.840

$2.510

$2.300

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Lixinc

USA . 12,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,050

-

-

-

-

RC Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$3.180

1k+ parts

$3.000

10k+ parts

$2.940

9,000

-

$3.180

$3.000

$2.940

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Perfect Parts

USA . 11 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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11

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Overview

Unlock the power of cutting-edge technology with the IS42S16800F-6BL by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality DRAM products that are perfect for a wide range of applications. With a focus on innovation and reliability, this product offers exceptional value and benefits to customers looking for high-performance memory solutions. Discover the advantage of seamless operation, superior performance, and unmatched efficiency with the IS42S16800F-6BL. Experience a new level of excellence in memory technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and protection for the internal components of the DRAM, ensuring reliable performance over time.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred and processed in a synchronized manner, improving overall system performance and efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V makes this DRAM energy-efficient and compatible with a wide range of systems.

Maximum Clock Frequency (fCLK): 166 MHz

High maximum clock frequency of 166 MHz allows for fast data processing and transmission, ideal for tasks that require quick response times.

Memory IC Type: SYNCHRONOUS DRAM

Being a synchronous DRAM, this memory module offers enhanced data processing capabilities and improved system performance compared to asynchronous DRAM.

Technical Specifications

DRAM IS42S16800F-6BL attributes and parameters. Explore more DRAM devices from Integrated Silicon Solution

Specs

Access Mode:

FOUR BANK PAGE BURST

Maximum Access Time:

5.4 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

166 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

1,2,4,8

JESD-30 Code:

S-PBGA-B54

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

54

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA54,9X9,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

3.3

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

1,2,4,8,FP

Maximum Standby Current:

.002 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

IS42S16800F-6BL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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