Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Infineon's SPD15P10PGBTMA1 is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for power applications. Features include 60A IDM, 230mJ EAS, and 0.24 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
Median Price
$2.040
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17
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1k+
Element14
1+ parts
$2.020
100+ parts
$1.230
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$0.917
10k+ parts
$0.880
Newark
$2.060
$1.070
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Chip1Stop
$2.170
$1.260
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DigiKey
$2.180
$0.948
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$0.592
Farnell
$2.232
$1.199
$0.859
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Mouser Electronics
$2.280
$0.990
$0.735
$0.677
Arrow
$0.529
Verical
$0.834
$0.743
Rochester
$0.803
$0.667
$0.595
RS (Exports)
$1.744
$0.784
Digiode
$0.624
Nova Conductors
$1.120
Vyrian
Rutronik
$0.638
Bristol Electronics
Astute Electronics Inc
Chip Stock
Semicontronic
$0.405
$0.395
$0.393
Ampacity Inc.
Corphita
$0.591
Aztec Data Supply Inc.
$1.011
Argo Parts USA
Netroflash
Modulus Dynamics
$1.280
$1.229
$1.178
Corohmni
Continental Prestige Electronics
$1.830
$1.170
$0.786
Benley Electronics
$3.750
GreenTree Electronics
Microchip USA
A-Z Elektronik GmbH
Perfect Parts
The use of plastic/epoxy material for the package body provides durability and protection for the internal components of the FET.
P-channel FETs typically have lower resistance and higher efficiency compared to N-channel FETs, making them a good choice for certain applications.
With a high minimum breakdown voltage, this FET can handle high voltage applications without risk of damage.
The high pulsed drain current rating allows for reliable performance even under heavy load conditions.
With a high maximum operating temperature, this FET can operate effectively in a wide range of temperature environments.
Power Field Effect Transistors (FET) SPD15P10PGBTMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Additional Features:
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
SPD15P10PGBTMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Cover Tape Width Cancellation 14/Jul/2015
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1N4148WS
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
STM32H743XIH6
STMicroelectronics
STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.
2N7002
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;
LL4148
Semtech Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
MBRA160T3G
Onsemi
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
DS18B20
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Shape or Style: ROUND; Housing: PLASTIC; Output Interface Type: 1-WIRE INTERFACE;
SMBJ18CA
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
Excel (Suzhou) Semiconductor
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
Weitron Technology
TE Connectivity
TE Connectivity's M24308/2-1F D-Sub Connector features 9 contacts, 2 rows, and a shell size of 1/E. With a rated current of 7.5A, it operates b/w -55°C to 125°C. Ideal for cable mounting applications, this connector has a steel shell with cadmium finish and uses crimp termination for female contact pins.
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
Vishay Telefunken
Adi Electronics
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; MIL Conformity: YES; Filter Feature: NO; Mating Info.: MULTIPLE MATING PARTS AVAILABLE;
2N2222A
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Lite-on Semiconductor
FDB44N25TM
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 307 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
BSC060N10NS3GATMA1
BSC060N10NS3GATMA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.006 ohm Drain-Source Resistance, and 360A Pulsed Drain Current. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Suitable for high-power systems requiring efficient power management in compact designs.
SCT3080KLGC11
ROHM
ROHM's SCT3080KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 77A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.104 ohm max drain-source resistance.
IRLML6244TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (ID): 6.3 A; Package Shape: RECTANGULAR;
FQP3P50
FQP3P50 by Onsemi is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 10.8A and EAS of 250mJ, making it suitable for high-power operations. With an operating temperature up to 150°C, this MOSFET offers reliable performance in various industrial settings.
SI7850DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7850DP-T1-GE3 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 40A IDM and 11mJ EAS, operating in enhancement mode. With a compact rectangular package style and flat terminals, it offers high performance in a small outline design.
IRFR3710ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Drain Current (Abs) (ID): 42 A; Case Connection: DRAIN;
G3R450MT17J
Genesic Semiconductor
G3R450MT17J by Genesic Semiconductor is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 12A and EAS of 59mJ. With SILICON CARBIDE material, it operates b/w -55 to 175 °C and has 0.63 ohm Drain-Source Resistance.
IRFP4668PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; No. of Elements: 1; Maximum Drain Current (ID): 130 A;
FDS4935A
FDS4935A by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It has a max drain current of 7A and a max drain-source on resistance of 0.023 ohm. This transistor is commonly used for switching applications in various electronic devices.
IRLML6346TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
IRLL110TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Additional Features: LOGIC LEVEL COMPATIBLE;
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
IRLML6402GTRPBF
Infineon's IRLML6402GTRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 22A IDM, 11mJ EAS, and 0.065 ohm RDS(on). With a small outline package and -55 to 150 °C operating range, it offers high performance in compact designs.
IRFH5004TRPBF
The Infineon Technologies IRFH5004TRPBF is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A ID. Ideal for SWITCHING applications, it features a built-in diode, 400A IDM, and 0.0026 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 150°C.
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 by Infineon is a N-CHANNEL FET with 80V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 66W. This MOSFET has a drain-source on resistance of 0.0123 ohm and can handle up to 150°C operating temperature.
DMP3056L-7
DMP3056L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 20A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.05 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs, it has a small outline package style and can withstand temperatures as low as -55°C.
IRFP4568PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 517 W; Terminal Finish: MATTE TIN OVER NICKEL; Peak Reflow Temperature (C): 250;
IRFP460LCPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .27 ohm;
SIA456DJ-T1-GE3
Vishay Intertechnology's SIA456DJ-T1-GE3 is a N-channel Power FET with 200V DS breakdown voltage and 2.6A max drain current. Ideal for switching applications, it operates in enhancement mode with 55ns turn on time and 75ns turn off time. Suitable for surface mount, this transistor has a max power dissipation of 19W in a small outline package.
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SPD18P06PGBTMA1
Infineon's SPD18P06PGBTMA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 74.4A IDM, and 0.13 ohm RDS(on). Ideal for power applications in small outline packages, operating at up to 175°C.
SPD15P10PLGBTMA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 15 A;
SPD18P06PGBT
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JEDEC-95 Code: TO-252AB; Minimum DS Breakdown Voltage: 60 V;
SPD100N03S2L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: MATTE TIN;
SPD10N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-30 Code: R-PSSO-G2; Terminal Finish: TIN LEAD;
SPD11N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .17 ohm;
SPD11N10BUMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Position: SINGLE; Transistor Application: SWITCHING;
SPD13N05L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Drain-Source On Resistance: .11 ohm; Package Style (Meter): SMALL OUTLINE;
SPD14N05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Qualification: Not Qualified; Maximum Operating Temperature: 175 Cel;
SPD14N06S2-80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Finish: MATTE TIN; Additional Features: AVALANCHE RATED;
SPD15N06S2L-64
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SPD15N06S2L64NTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; No. of Terminals: 2; Case Connection: DRAIN;
SPD15P10PG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 128 W; Package Shape: RECTANGULAR; Additional Features: AVALANCHE RATED;
SPD15P10PGBT
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: AVALANCHE RATED; Case Connection: DRAIN;
SPD15P10PLG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 128 W; Maximum Pulsed Drain Current (IDM): 60 A; Minimum Operating Temperature: -55 Cel;
SPD18P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Additional Features: AVALANCHE RATED; Avalanche Energy Rating (EAS): 150 mJ;
SPD18P06PG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 80 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
SPD18P06PGXT
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 150 mJ; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
Supply Digital Components
$106.00
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12,000 In-Stock
Total price ≈ $80,197.29
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