Loading...

SPD18P06PGBT

Infineon Technologies

SPD18P06PGBT by Infineon Technologies

Infineon's SPD18P06PGBT is a P-channel FET with 60V breakdown voltage, 18.6A max drain current, and 0.13 ohm on-resistance. Ideal for applications requiring high power efficiency in compact spaces due to its small outline package and single configuration with built-in diode. Operating in enhancement mode, it offers reliable performance up to 175°C.

Median Price

$0.315

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.315

2,500

-

-

-

$0.315

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,069 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,069

-

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Digiode

USA . 487 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

487

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,396 parts In-Stock

1+ parts

$0.281

100+ parts

-

1k+ parts

-

10k+ parts

-

2,396

$0.281

-

-

-

Semicontronic

India . 2,060 parts In-Stock

1+ parts

$0.281

100+ parts

$0.274

1k+ parts

$0.273

10k+ parts

-

2,060

$0.281

$0.274

$0.273

-

Modulus Dynamics

Lithuania . 24,966 parts In-Stock

1+ parts

$0.443

100+ parts

$0.425

1k+ parts

$0.408

10k+ parts

-

24,966

$0.443

$0.425

$0.408

-

Corohmni

South Africa . 361 parts In-Stock

1+ parts

$0.478

100+ parts

-

1k+ parts

-

10k+ parts

-

361

$0.478

-

-

-

Aztec Data Supply Inc.

USA . 4,262 parts In-Stock

1+ parts

$1.640

100+ parts

-

1k+ parts

-

10k+ parts

-

4,262

$1.640

-

-

-

Continental Prestige Electronics

USA . 4,447 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,447

-

-

-

-

Argo Parts USA

USA . 3,944 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,944

-

-

-

-

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Corphita

USA . 330 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

330

-

-

-

-

Overview

Unleash the power of innovation with Infineon Technologies' SPD18P06PGBT Power FET. Designed with cutting-edge technology and top-quality materials, this P-channel transistor offers unparalleled performance and reliability. Ideal for a wide range of applications, from automotive to industrial, this FET delivers superior efficiency and power management. Say goodbye to compromises and hello to excellence with the SPD18P06PGBT - the ultimate solution for your power needs. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Allows for efficient control of power flow in the circuit.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by including a built-in diode.

Surface Mount: YES

Easy to install and mount on circuit boards, making assembly quicker and more efficient.

Minimum DS Breakdown Voltage: 60 V

Can handle higher voltages without breakdown, providing reliability in high-power applications.

Package Shape: RECTANGULAR

A common and compact shape that fits well on standard PCB layouts.

Terminal Form: GULL WING

Facilitates easy soldering onto circuit boards for a secure connection.

Operating Mode: ENHANCEMENT MODE

Allows for efficient switching and control of power flow.

Maximum Pulsed Drain Current (IDM): 74.4 A

Capable of handling high surge currents for robust performance.

Avalanche Energy Rating (EAS): 150 mJ

Provides protection against voltage spikes and transients in the circuit.

No. of Terminals: 2

Simplifies circuit connections and reduces complexity.

Package Style (Meter): SMALL OUTLINE

Compact form factor saves space on the PCB and allows for high-density layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high performance and reliability for power control applications.

Maximum Operating Temperature: 175 °C

Can function reliably in high-temperature environments.

Transistor Element Material: SILICON

Ensures high efficiency and performance for power switching applications.

Maximum Drain Current (ID): 18.6 A

Capable of handling high continuous currents for sustained operation.

Maximum Drain-Source On Resistance: 0.13 ohm

Ensures efficient power flow with minimal resistance losses.

Terminal Position: SINGLE

Simplifies circuit connections and reduces complexity.

Technical Specifications

Power Field Effect Transistors (FET) SPD18P06PGBT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

150 mJ

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

18.6 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

74.4 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

SPD18P06PGBT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 18