Loading...

PZT3906E6327

Infineon Technologies

PZT3906E6327 by Infineon Technologies

PZT3906E6327 by Infineon is a PNP BJT transistor with 40V VCE, 0.2A IC, and 250MHz fT. Ideal for switching applications, it has a hFE of 30 and ton/toff of 70/300ns. With Gull Wing terminals in a small outline package, it's designed for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,423

-

-

-

-

Digiode

USA . 970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

970

-

-

-

-

Nova Conductors

Japan . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,783 parts In-Stock

1+ parts

$0.586

100+ parts

-

1k+ parts

-

10k+ parts

-

1,783

$0.586

-

-

-

Corohmni

South Africa . 5 parts In-Stock

1+ parts

$1.494

100+ parts

-

1k+ parts

-

10k+ parts

-

5

$1.494

-

-

-

Modulus Dynamics

Lithuania . 320 parts In-Stock

1+ parts

$1.722

100+ parts

$1.653

1k+ parts

$1.584

10k+ parts

-

320

$1.722

$1.653

$1.584

-

Semicontronic

India . 1,237 parts In-Stock

1+ parts

$6.050

100+ parts

$5.899

1k+ parts

$5.868

10k+ parts

-

1,237

$6.050

$5.899

$5.868

-

AZTECH Wire

Italy . 823 parts In-Stock

1+ parts

$17.608

100+ parts

-

1k+ parts

-

10k+ parts

-

823

$17.608

-

-

-

Ampacity Inc.

Singapore . 454 parts In-Stock

1+ parts

$20.050

100+ parts

-

1k+ parts

-

10k+ parts

-

454

$20.050

-

-

-

Continental Prestige Electronics

USA . 3,623 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,623

-

-

-

-

Corphita

USA . 807 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

807

-

-

-

-

Argo Parts USA

USA . 405 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

405

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Enhance your electronic devices with the PZT3906E6327 by Infineon Technologies. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. Its PNP configuration and high DC current gain ensure optimal functionality, while its compact design and surface mount capability make it ideal for space-constrained projects. Trust in Infineon Technologies to deliver quality products that exceed expectations. Upgrade your devices today with the PZT3906E6327 and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, ensuring the transistor's longevity.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile for various circuit designs.

Configuration: SINGLE

Simplifies circuit design as there is only one transistor to work with, reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and reliable for such tasks.

Surface Mount: YES

Suitable for modern PCB designs and allows for compact and efficient circuit layouts.

Package Shape: RECTANGULAR

Easily mountable and fits well within standard PCB layouts, optimizing space usage.

Terminal Form: GULL WING

Facilitates easy soldering onto the PCB, ensuring a secure connection and enhancing reliability.

No. of Terminals: 4

Provides necessary connection points for the transistor within the circuit.

Package Style (Meter): SMALL OUTLINE

Compact form factor suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 30

Ensures stable and consistent gain performance in various operating conditions.

Maximum Collector-Emitter Voltage: 40 V

Allows for high voltage handling capability in switching applications.

Transistor Element Material: SILICON

Provides good electrical performance characteristics and reliability for the transistor.

Maximum Turn On Time (ton): 70 ns

Fast turn-on time enables quick response in switching operations, improving efficiency.

Maximum Collector Current (IC): 0.2 A

Able to handle moderate current levels for various circuit requirements.

Maximum Turn Off Time (toff): 300 ns

Fast turn-off time helps in minimizing power dissipation during switching transitions.

Terminal Position: DUAL

Provides flexibility in circuit connections and layouts.

Case Connection: COLLECTOR

Clear connection point for the collector terminal, aiding in circuit design and troubleshooting.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency indicates high-speed switching capability, suitable for fast-operating circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT3906E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

PZT3906E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20