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IRFL014NTRPBF

Infineon Technologies

IRFL014NTRPBF by Infineon Technologies

IRFL014NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 2.7A Drain Current, ideal for SWITCHING applications. It operates in ENHANCEMENT MODE, has a 0.16 ohm On Resistance, and can handle up to 2.1W power dissipation. This small outline transistor is designed for surface mount with GULL WING terminals.

Median Price

$0.413

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 13,846 parts In-Stock

1+ parts

$0.990

100+ parts

$0.403

1k+ parts

$0.279

10k+ parts

$0.216

13,846

$0.990

$0.403

$0.279

$0.216

Mouser Electronics

USA . 48,859 parts In-Stock

1+ parts

$1.100

100+ parts

$0.450

1k+ parts

$0.310

10k+ parts

$0.235

48,859

$1.100

$0.450

$0.310

$0.235

Newark

USA . 292 parts In-Stock

1+ parts

$1.230

100+ parts

$0.575

1k+ parts

$0.444

10k+ parts

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292

$1.230

$0.575

$0.444

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Adafruit Industries

USA . 54 parts In-Stock

1+ parts

$1.237

100+ parts

$1.126

1k+ parts

$1.014

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54

$1.237

$1.126

$1.014

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Future Electronics

Canada . 97,500 parts In-Stock

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$0.191

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$0.191

Verical

USA . 77,500 parts In-Stock

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$0.192

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$0.192

Arrow

USA . 52,500 parts In-Stock

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$0.146

52,500

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$0.146

Farnell

UK . 5,269 parts In-Stock

1+ parts

-

100+ parts

$0.364

1k+ parts

$0.246

10k+ parts

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5,269

-

$0.364

$0.246

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Element14

Singapore . 5,269 parts In-Stock

1+ parts

-

100+ parts

$0.658

1k+ parts

$0.427

10k+ parts

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5,269

-

$0.658

$0.427

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Chip1Stop

Japan . 2,665 parts In-Stock

1+ parts

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100+ parts

$0.413

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2,665

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$0.413

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Distrelec

Netherlands . 2,500 parts In-Stock

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2,500

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Rochester

USA . 150 parts In-Stock

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$0.246

1k+ parts

$0.204

10k+ parts

$0.182

150

-

$0.246

$0.204

$0.182

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 494 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

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494

$0.191

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.428

100+ parts

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50

$0.428

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Maritex

Poland . 4,650 parts In-Stock

1+ parts

$0.536

100+ parts

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4,650

$0.536

-

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Ozdisan Elektronik

Türkiye . 489 parts In-Stock

1+ parts

$71.692

100+ parts

-

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489

$71.692

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Chip Stock

USA . 92,008 parts In-Stock

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92,008

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IBS Electronics

USA . 45,000 parts In-Stock

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$0.219

45,000

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$0.219

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

$0.315

10,000

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$0.315

Schukat

Germany . 8,600 parts In-Stock

1+ parts

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100+ parts

$0.292

1k+ parts

$0.243

10k+ parts

$0.234

8,600

-

$0.292

$0.243

$0.234

Rutronik

Germany . 7,500 parts In-Stock

1+ parts

-

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$0.196

7,500

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$0.196

NexGen Digital

USA . 2,501 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,275 parts In-Stock

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Vyrian

USA . 2,099 parts In-Stock

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2,099

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J2 Sourcing AB

Sweden . 1,580 parts In-Stock

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1,580

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Bristol Electronics

USA . 1,498 parts In-Stock

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1,498

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Micros

Poland . 680 parts In-Stock

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$0.295

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680

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$0.295

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Semi Source

USA . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,126 parts In-Stock

1+ parts

$0.145

100+ parts

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2,126

$0.145

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Corphita

USA . 983 parts In-Stock

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$0.181

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983

$0.181

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Semicontronic

India . 2,080 parts In-Stock

1+ parts

$0.315

100+ parts

$0.307

1k+ parts

$0.306

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2,080

$0.315

$0.307

$0.306

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Argo Parts USA

USA . 4,272 parts In-Stock

1+ parts

$0.382

100+ parts

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10k+ parts

$0.371

4,272

$0.382

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-

$0.371

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.419

100+ parts

-

1k+ parts

$0.403

10k+ parts

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1,000

$0.419

-

$0.403

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Modulus Dynamics

Lithuania . 5,307 parts In-Stock

1+ parts

$0.842

100+ parts

$0.808

1k+ parts

$0.775

10k+ parts

-

5,307

$0.842

$0.808

$0.775

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Advanced Electronics

New Zealand . 54 parts In-Stock

1+ parts

$1.237

100+ parts

$1.126

1k+ parts

$1.014

10k+ parts

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54

$1.237

$1.126

$1.014

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Corohmni

South Africa . 131 parts In-Stock

1+ parts

$1.463

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131

$1.463

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Aztec Data Supply Inc.

USA . 2,200 parts In-Stock

1+ parts

$1.841

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2,200

$1.841

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Perfect Parts

USA . 89,139 parts In-Stock

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89,139

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RC Electronics

USA . 67,500 parts In-Stock

1+ parts

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$0.400

1k+ parts

$0.380

10k+ parts

$0.370

67,500

-

$0.400

$0.380

$0.370

Lixinc

USA . 19,978 parts In-Stock

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Eastek

USA . 15,000 parts In-Stock

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Continental Prestige Electronics

USA . 8,135 parts In-Stock

1+ parts

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100+ parts

$0.504

1k+ parts

$0.297

10k+ parts

$0.244

8,135

-

$0.504

$0.297

$0.244

GreenTree Electronics

Israel . 6,494 parts In-Stock

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6,494

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Kepictronics

USA . 3,180 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,999 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,999 parts In-Stock

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Robosynatics

Brazil . 439 parts In-Stock

1+ parts

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$1.160

1k+ parts

$1.137

10k+ parts

$1.137

439

-

$1.160

$1.137

$1.137

Lucentia Tech

USA . 439 parts In-Stock

1+ parts

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100+ parts

$1.160

1k+ parts

$1.137

10k+ parts

$1.137

439

-

$1.160

$1.137

$1.137

Authorized Procurement Solutions

USA . 110 parts In-Stock

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110

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Overview

Discover the power of the IRFL014NTRPBF by Infineon Technologies, a high-quality Small Signal Field Effect Transistor that offers exceptional performance in switching applications. With a maximum drain current of 2.7A and a minimum operating temperature of -55°C, this N-CHANNEL transistor is built for reliability and efficiency. Its single configuration with built-in diode makes it a versatile choice for various electronic devices. Trust in Infineon Technologies to deliver cutting-edge technology that meets your needs and exceeds your expectations. Upgrade your projects with the IRFL014NTRPBF and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making it a good choice for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors have lower ON resistance and faster switching speeds, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor from reverse voltage, enhancing its efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers precision control and fast response times.

Surface Mount: YES

The surface mount design saves space and simplifies assembly, making it ideal for compact electronic devices.

Minimum DS Breakdown Voltage: 55 V

With a high breakdown voltage, this transistor can handle high voltages and prevent damage from overloads.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on circuit boards and efficient use of space.

Terminal Form: GULL WING

The gull-wing terminals provide secure connections and ease of soldering, ensuring reliable performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low leakage current, improving overall circuit efficiency.

Maximum Drain Current (Abs): 2.7 A

With a high maximum drain current, this transistor can handle heavy loads and ensure reliable performance.

No. of Terminals: 3

The three terminals provide connections for input, output, and control signals, enabling versatile use in various circuit configurations.

Maximum Power Dissipation (Abs): 2.1 W

The high maximum power dissipation allows the transistor to dissipate heat effectively and operate at high power levels.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for dense packing on PCBs, making it suitable for compact applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low ON resistance, improving overall circuit performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand extreme heat conditions, ensuring reliable operation in various environments.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low leakage current, and consistent performance over a wide temperature range.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor is suitable for use in cold environments and extreme temperature conditions.

Maximum Drain Current (ID): 1.9 A

The maximum drain current rating indicates the capability of the transistor to handle current flow, ensuring reliable performance under load.

Maximum Drain-Source On Resistance: 0.16 ohm

With a low ON resistance, this transistor minimizes power loss and improves efficiency in switching applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and enables easy integration into existing designs.

Case Connection: DRAIN

The drain connection provides a secure connection point for the transistor, ensuring stable performance and efficient heat dissipation.

Technical Specifications

Small Signal Field Effect Transistors (FET) IRFL014NTRPBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

2.7 A

Maximum Drain Current (ID):

1.9 A

Maximum Drain-Source On Resistance:

.16 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PSSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFL014NTRPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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