Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IRFL014NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 2.7A Drain Current, ideal for SWITCHING applications. It operates in ENHANCEMENT MODE, has a 0.16 ohm On Resistance, and can handle up to 2.1W power dissipation. This small outline transistor is designed for surface mount with GULL WING terminals.
Median Price
$0.413
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This material provides durability and reliability, making it a good choice for long-term use.
N-channel transistors have lower ON resistance and faster switching speeds, making them suitable for high-performance applications.
The built-in diode simplifies circuit design and protects the transistor from reverse voltage, enhancing its efficiency.
Designed specifically for switching applications, this transistor offers precision control and fast response times.
The surface mount design saves space and simplifies assembly, making it ideal for compact electronic devices.
With a high breakdown voltage, this transistor can handle high voltages and prevent damage from overloads.
The rectangular shape allows for easy placement on circuit boards and efficient use of space.
The gull-wing terminals provide secure connections and ease of soldering, ensuring reliable performance.
Enhancement mode transistors offer high input impedance and low leakage current, improving overall circuit efficiency.
With a high maximum drain current, this transistor can handle heavy loads and ensure reliable performance.
The three terminals provide connections for input, output, and control signals, enabling versatile use in various circuit configurations.
The high maximum power dissipation allows the transistor to dissipate heat effectively and operate at high power levels.
The small outline package style saves space and allows for dense packing on PCBs, making it suitable for compact applications.
MOSFET technology offers high switching speeds and low ON resistance, improving overall circuit performance.
With a high maximum operating temperature, this transistor can withstand extreme heat conditions, ensuring reliable operation in various environments.
Silicon transistors offer high reliability, low leakage current, and consistent performance over a wide temperature range.
With a low minimum operating temperature, this transistor is suitable for use in cold environments and extreme temperature conditions.
The maximum drain current rating indicates the capability of the transistor to handle current flow, ensuring reliable performance under load.
With a low ON resistance, this transistor minimizes power loss and improves efficiency in switching applications.
The single terminal position simplifies circuit connections and enables easy integration into existing designs.
The drain connection provides a secure connection point for the transistor, ensuring stable performance and efficient heat dissipation.
Small Signal Field Effect Transistors (FET) IRFL014NTRPBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies
Additional Features:
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
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Transistor Application:
Transistor Element Material:
IRFL014NTRPBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Mult Dev Label Chgs Aug/2020
PCN Assembly/Origin - Mult Dev A/T Site 26/Feb/2021
PCN Packaging - Barcode Label Update 24/Feb/2017 Package Drawing Update 19/Aug/2015
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
MMBT2222ALT1G
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N7002
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
LL4148
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Micro Commercial Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Rfe International
2N2222A
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Sensitron Semiconductor
LM2931Z-5.0G
Onsemi
LM2931Z-5.0G by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V output voltage, 0.6V dropout voltage, and 0.1A output current. It is ideal for applications requiring stable power supply in temperature-sensitive environments due to its operating range of -40°C to 125°C.
MBRA160T3G
MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
Microchip Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
1N4148
Leshan Radio
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317T
Analog Devices
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
ISO1050DUBR
Texas Instruments
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
M39029/56-351
Itt Cannon
CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;
FDC5614P_NL
Fairchild Semiconductor
FDC5614P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3A Drain Current, 0.105 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package style, it can handle up to 1.6W power dissipation at temperatures ranging from -55 to 150°C.
FDN360P_NL
Fairchild Semiconductor's FDN360P_NL is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2A, 0.08 ohm RDS(on), and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150°C operating temperature.
BSS123LT7G
BSS123LT7G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring an enhancement mode transistor with built-in diode. Operates b/w -55 to 150 °C, making it suitable for various electronic devices.
NDC7001C
NDC7001C by Onsemi is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.51A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
FDC6305N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
BSS138W
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
ZVP2106AM1
ZVP2106AM1 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Utilizes METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with GULL WING terminals.
NDS9407
NDS9407 by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating from -55 to 175°C, this MOSFET has 0.15 ohm max on resistance and matte tin terminal finish.
BSH103,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .5 ohm; Peak Reflow Temperature (C): 260; No. of Terminals: 3;
BSS84
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-236AB;
ZVP1320FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 200 V; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Position: DUAL;
BSS308PEH6327XTSA1
Infineon Technologies
BSS308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.08 ohm RDS(on), and 2A ID. Ideal for small outline applications, it operates in enhancement mode with a max temperature of 150°C. Suitable for various electronic devices requiring high performance in compact designs.
NTJD4001NT1G
NTJD4001NT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 30V DS breakdown voltage, 0.25A drain current, and 2.5 ohm on resistance. Ideal for small outline packages in high-temp environments up to 150°C.
T2N7002AK,LM
Toshiba
Toshiba T2N7002AK,LM is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode and resistor. Operating in ENHANCEMENT MODE, it has 1W power dissipation and max temp of 150°C.
ZVP3310FTA
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
FDC3601N
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Drain-Source On Resistance: .5 ohm; Package Shape: RECTANGULAR;
2N7000TA
2N7000TA by Onsemi is a N-CHANNEL FET with 0.2A max drain current and 0.4W max power dissipation. Ideal for low-power applications, it features a 5 ohm max drain-source resistance in a cylindrical package style.
SI2323DS-T1-BE3
Vishay Intertechnology
Vishay Intertechnology's SI2323DS-T1-BE3 is a P-CHANNEL FET with 20V DS breakdown voltage and 3.7A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.039 ohm RDS(on) and 140pF Crss, suitable for surface mount designs at -55 to 150°C temperature range.
FDC658AP
The Onsemi FDC658AP is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for surface mount designs.
FDS6681Z
FDS6681Z by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 20A max Drain Current. Operating in ENHANCEMENT MODE, it has a max Power Dissipation of 2.5W and 0.0046 ohm Drain-Source On Resistance.
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FDC5612
FDC5612 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 4.3A and an On Resistance of 0.055 ohm. With a small outline package style and operating temperature up to 150°C, it is suitable for various electronic devices requiring high power dissipation.
IRFL9110TRPBF
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Power Dissipation Ambient: 2 W; Terminal Position: SINGLE;
Vishay Intertechnology's IRFL9110TRPBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 1.1A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
IRFL9110TRPBF-BE3
Vishay Intertechnology's IRFL9110TRPBF-BE3 is a P-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 1.2 ohm Drain-Source On Resistance, and 1.1A Drain Current. With a max power dissipation of 3.1W and operating temperature up to 150°C, it is ideal for small outline surface mount designs requiring high efficiency switching capabilities.
IRFL024NTRPBF
IRFL024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, 0.0028A ID, and 0.075ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with a max temp of 150°C. The transistor has a GULL WING terminal form, operates in METAL-OXIDE SEMICONDUCTOR technology, and can withstand -55 to 150°C temperature range.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 2.8 A;
IRFL014NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 55 V;
IRFL9110PBF
Vishay Intertechnology's IRFL9110PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 1.1A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package, operating in ENHANCEMENT MODE up to 150°C.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Minimum Operating Temperature: -55 Cel; Terminal Position: SINGLE;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Minimum DS Breakdown Voltage: 100 V; Case Connection: DRAIN;
IRFL024ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3; No. of Elements: 1;
IRFL024ZTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5.1A and 0.0575 ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. This surface mount transistor has a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology.
IRFL4310TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; JESD-30 Code: R-PSSO-G3; Peak Reflow Temperature (C): 260;
IRFL4310TRPBF by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage and 2.2A max drain current, ideal for SWITCHING applications. It operates in ENHANCEMENT MODE, has a 0.2 ohm max on resistance, and can handle up to 1W power dissipation. The transistor's package is RECTANGULAR with GULL WING terminals, suitable for surface mount assembly.
IRFL9110
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Terminal Position: SINGLE; Transistor Application: SWITCHING;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; No. of Terminals: 3; Additional Features: AVALANCHE RATED;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Additional Features: AVALANCHE RATED; Terminal Position: SINGLE;
IRFL9110TR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; JEDEC-95 Code: TO-261AA; Operating Mode: ENHANCEMENT MODE;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Feedback Capacitance (Crss): 18 pF; Maximum Drain Current (ID): 1.1 A;
IRFL014NTR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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