Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Vishay Intertechnology's IRFL9110PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 1.1A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package, operating in ENHANCEMENT MODE up to 150°C.
Median Price
$0.916
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19
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1k+
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$0.563
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$1.810
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$99.990
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The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for applications where weight and reliability are important.
The P-channel type allows for efficient current flow in certain circuit designs, making this transistor suitable for specific types of electronic devices.
The built-in diode simplifies circuit design by providing a convenient component for certain applications, saving time and space on the PCB.
Designed for switching applications, this transistor offers fast response times and efficient operation, making it a reliable choice for various electronic systems.
Being surface mountable, this transistor is easy to install and saves space on the PCB, making it suitable for compact electronic devices.
With a high minimum breakdown voltage, this transistor can handle high voltages, making it suitable for applications where voltage spikes may occur.
The metal-oxide semiconductor technology used in this transistor offers high performance and reliability, making it a good choice for demanding electronic applications.
With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring reliable operation in harsh environments.
The matte tin finish on the terminals provides good solderability and corrosion resistance, extending the lifespan of the transistor in various operating conditions.
Small Signal Field Effect Transistors (FET) IRFL9110PBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology
Additional Features:
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
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Transistor Application:
Transistor Element Material:
IRFL9110PBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
1N4148
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
Toshiba
Forward International Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
BAV99-7-F
Diodes Incorporated
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
BAV99LT1G
Onsemi
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
2N2222A
Loras Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ST3485EBDR
ST3485EBDR by STMicroelectronics is a Line Driver & Receiver with 3.3V power supply, EIA-422/EIA-485 interface standard, and 30ns max transmit delay. It is ideal for industrial applications requiring differential output and operates in temperatures ranging from -40 to 85°C.
LM78L05ACMX/NOPB
Texas Instruments
LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.
LL4148
Transys Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
SZNUP2105LT1G
SZNUP2105LT1G by Onsemi is a Transient Suppression Device with 2 elements in a common anode configuration. It has a max non-repetitive peak reverse power dissipation of 350W and breakdown voltage of 29.1V. Ideal for applications requiring bidirectional polarity protection, such as automotive electronics and industrial equipment due to its AEC-Q101 compliance and high clamping voltage of 44V.
LM7805CT/NOPB
LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.
2N7002
Promax-johnton
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
BSS138
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
Diotec Semiconductor Ag
LM358M
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
NDS9407
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDN338P
FDN338P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.6A and 0.115 ohm on-resistance, operating in enhancement mode at up to 150°C. This small outline transistor with GULL WING terminals is designed for high power dissipation (0.5W) in surface mount configurations.
BSS138PW
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Peak Reflow Temperature (C): 260; JESD-30 Code: R-PDSO-G3;
NX2301P,215
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .19 ohm;
BSS126H6327XTSA2
BSS126H6327XTSA2 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. It features a built-in diode, operates in depletion mode, and has a max ID of 0.021A. Ideal for applications requiring low feedback capacitance like signal amplification circuits.
MMBF4393LT1G
MMBF4393LT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 0.225W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
BSL308PEH6327XTSA1
BSL308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage. It features 2 elements with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. Ideal for applications requiring high drain current up to 2A, low on-resistance of 0.08 ohm, and AEC-Q101 compliance.
BSS138NE6433
BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.
BSS308PEH6327XTSA1
BSS308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.08 ohm RDS(on), and 2A ID. Ideal for small outline applications, it operates in enhancement mode with a max temperature of 150°C. Suitable for various electronic devices requiring high performance in compact designs.
BS170
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Transistor Application: SWITCHING; Package Style (Meter): CYLINDRICAL;
ZVN2110A
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL;
BSS84,215
NXP Semiconductors' BSS84,215 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.25W.
FDV304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
MMBF170LT1
MMBF170LT1 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. This small outline transistor has a peak reflow temp of 235°C and can withstand temperatures from -55 to 150°C.
2N7002KW
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Terminal Position: DUAL; Qualification: Not Qualified;
NX3008NBKW,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; JESD-30 Code: R-PDSO-G3;
BSS138Q-7-F
BSS138Q-7-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage and 0.2A max drain current, ideal for switching applications. It operates in enhancement mode, has 3 terminals, and features a built-in diode. With a max power dissipation of 0.3W and operating temperature range from -55 to 150°C, it meets AEC-Q101 standards for automotive use.
MMBF170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .5 A; Transistor Application: SWITCHING;
BSS84AKM,315
NXP Semiconductors' BSS84AKM,315 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.23A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a chip carrier package style. Operating at up to 150°C, it has an 8.5 ohm max drain-source on resistance.
2N7002BK,215
NXP Semiconductors' 2N7002BK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.35A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 1.6 ohm RDS(on) and -55 to 150 °C temp range.
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IRFL9110TRPBF
Vishay Siliconix
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Power Dissipation Ambient: 2 W; Terminal Position: SINGLE;
Vishay Intertechnology
Vishay Intertechnology's IRFL9110TRPBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 1.1A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 3.1W.
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
IRFL9110TRPBF-BE3
Vishay Intertechnology's IRFL9110TRPBF-BE3 is a P-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 1.2 ohm Drain-Source On Resistance, and 1.1A Drain Current. With a max power dissipation of 3.1W and operating temperature up to 150°C, it is ideal for small outline surface mount designs requiring high efficiency switching capabilities.
IRFL024NTRPBF
IRFL024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, 0.0028A ID, and 0.075ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with a max temp of 150°C. The transistor has a GULL WING terminal form, operates in METAL-OXIDE SEMICONDUCTOR technology, and can withstand -55 to 150°C temperature range.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 2.8 A;
IRFL014NTRPBF
IRFL014NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 2.7A Drain Current, ideal for SWITCHING applications. It operates in ENHANCEMENT MODE, has a 0.16 ohm On Resistance, and can handle up to 2.1W power dissipation. This small outline transistor is designed for surface mount with GULL WING terminals.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 55 V;
IRFL9110PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Minimum Operating Temperature: -55 Cel; Terminal Position: SINGLE;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Minimum DS Breakdown Voltage: 100 V; Case Connection: DRAIN;
IRFL024ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3; No. of Elements: 1;
IRFL024ZTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5.1A and 0.0575 ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. This surface mount transistor has a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology.
IRFL4310TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; JESD-30 Code: R-PSSO-G3; Peak Reflow Temperature (C): 260;
IRFL4310TRPBF by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage and 2.2A max drain current, ideal for SWITCHING applications. It operates in ENHANCEMENT MODE, has a 0.2 ohm max on resistance, and can handle up to 1W power dissipation. The transistor's package is RECTANGULAR with GULL WING terminals, suitable for surface mount assembly.
IRFL9110
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Terminal Position: SINGLE; Transistor Application: SWITCHING;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; No. of Terminals: 3; Additional Features: AVALANCHE RATED;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Additional Features: AVALANCHE RATED; Terminal Position: SINGLE;
IRFL9110TR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; JEDEC-95 Code: TO-261AA; Operating Mode: ENHANCEMENT MODE;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Feedback Capacitance (Crss): 18 pF; Maximum Drain Current (ID): 1.1 A;
IRFL214
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Maximum Drain Current (Abs) (ID): .79 A; Transistor Element Material: SILICON;
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