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IPB90N06S4L04ATMA2

Infineon Technologies

IPB90N06S4L04ATMA2 by Infineon Technologies

IPB90N06S4L04ATMA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 360A IDM, and 0.0034 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.

Median Price

$2.820

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,403 parts In-Stock

1+ parts

$2.500

100+ parts

$1.220

1k+ parts

$0.887

10k+ parts

-

1,403

$2.500

$1.220

$0.887

-

Chip1Stop

Japan . 1,000 parts In-Stock

1+ parts

$3.140

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$3.140

-

-

-

DigiKey

USA . 3,812 parts In-Stock

1+ parts

$3.150

100+ parts

$1.417

1k+ parts

$1.062

10k+ parts

$0.978

3,812

$3.150

$1.417

$1.062

$0.978

Newark

USA . 1,392 parts In-Stock

1+ parts

$3.240

100+ parts

$1.460

1k+ parts

$1.150

10k+ parts

-

1,392

$3.240

$1.460

$1.150

-

Mouser Electronics

USA . 1,095 parts In-Stock

1+ parts

$3.250

100+ parts

$1.470

1k+ parts

$1.120

10k+ parts

-

1,095

$3.250

$1.470

$1.120

-

Rochester

USA . 1,464 parts In-Stock

1+ parts

-

100+ parts

$1.330

1k+ parts

$1.100

10k+ parts

$0.984

1,464

-

$1.330

$1.100

$0.984

Element14

Singapore . 1,403 parts In-Stock

1+ parts

-

100+ parts

$2.040

1k+ parts

$1.420

10k+ parts

$1.400

1,403

-

$2.040

$1.420

$1.400

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.052

10k+ parts

$0.999

1,000

-

-

$1.052

$0.999

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 560 parts In-Stock

1+ parts

$1.036

100+ parts

-

1k+ parts

-

10k+ parts

-

560

$1.036

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$1.630

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$1.630

-

-

-

Vyrian

USA . 1,406 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,406

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,168 parts In-Stock

1+ parts

$0.930

100+ parts

-

1k+ parts

-

10k+ parts

-

1,168

$0.930

-

-

-

Semicontronic

India . 963 parts In-Stock

1+ parts

$0.930

100+ parts

$0.907

1k+ parts

$0.902

10k+ parts

-

963

$0.930

$0.907

$0.902

-

Corphita

USA . 835 parts In-Stock

1+ parts

$0.981

100+ parts

-

1k+ parts

-

10k+ parts

-

835

$0.981

-

-

-

Aztec Data Supply Inc.

USA . 26,079 parts In-Stock

1+ parts

$1.107

100+ parts

-

1k+ parts

-

10k+ parts

-

26,079

$1.107

-

-

-

Argo Parts USA

USA . 5,022 parts In-Stock

1+ parts

$1.630

100+ parts

-

1k+ parts

-

10k+ parts

-

5,022

$1.630

-

-

-

Modulus Dynamics

Lithuania . 18,067 parts In-Stock

1+ parts

$1.635

100+ parts

$1.570

1k+ parts

$1.504

10k+ parts

-

18,067

$1.635

$1.570

$1.504

-

Corohmni

South Africa . 44 parts In-Stock

1+ parts

$1.635

100+ parts

-

1k+ parts

-

10k+ parts

-

44

$1.635

-

-

-

Microchip USA

USA . 2,318 parts In-Stock

1+ parts

$9.254

100+ parts

-

1k+ parts

-

10k+ parts

-

2,318

$9.254

-

-

-

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Perfect Parts

USA . 2,251 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,251

-

-

-

-

Continental Prestige Electronics

USA . 1,751 parts In-Stock

1+ parts

-

100+ parts

$1.780

1k+ parts

$1.430

10k+ parts

-

1,751

-

$1.780

$1.430

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$1.597

1k+ parts

$1.548

10k+ parts

$1.516

1,000

-

$1.597

$1.548

$1.516

Overview

Experience the power of cutting-edge technology with the IPB90N06S4L04ATMA2 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Power Field Effect Transistors that are designed to enhance performance and reliability in a variety of applications. From industrial machinery to automotive systems, this N-CHANNEL transistor offers unparalleled value with its high efficiency and low resistance, providing customers with the competitive edge they need. Trust Infineon for superior quality and performance that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures the product is lightweight and durable, making it ideal for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and efficiency compared to P-channel FETs, making this product a good choice for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making this product a convenient choice for compact electronic devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, making this product suitable for mass production.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage provides protection against voltage spikes, making this product reliable for high voltage applications.

Maximum Pulsed Drain Current (IDM): 360 A

The high pulsed drain current capability allows this product to handle large current spikes, making it suitable for power electronics applications.

Avalanche Energy Rating (EAS): 331 mJ

The high avalanche energy rating ensures the product can withstand transient voltage spikes, enhancing its reliability in harsh operating conditions.

Maximum Drain Current (ID): 90 A

The high drain current rating enables this product to handle substantial current flow, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.0034 ohm

The low on-resistance minimizes power losses and improves efficiency, making this product a cost-effective choice for power switching applications.

Technical Specifications

Power Field Effect Transistors (FET) IPB90N06S4L04ATMA2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

331 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

90 A

Maximum Drain-Source On Resistance:

.0034 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

360 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

IPB90N06S4L04ATMA2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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