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IGB30N60T

Infineon Technologies

IGB30N60T by Infineon Technologies

IGB30N60T by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 187W max power dissipation. Ideal for power control applications due to its fast turn-off time of 382ns and small outline package style.

Median Price

$2.860

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 837 parts In-Stock

1+ parts

$2.860

100+ parts

$1.280

1k+ parts

$0.983

10k+ parts

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837

$2.860

$1.280

$0.983

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Distributors (In-Stock)

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Digiode

USA . 641 parts In-Stock

1+ parts

$2.584

100+ parts

-

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641

$2.584

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Vyrian

USA . 856 parts In-Stock

1+ parts

$2.780

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856

$2.780

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ComSIT Distribution GmbH

Germany . 240 parts In-Stock

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240

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 17,588 parts In-Stock

1+ parts

$1.992

100+ parts

$1.912

1k+ parts

$1.833

10k+ parts

-

17,588

$1.992

$1.912

$1.833

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Corphita

USA . 831 parts In-Stock

1+ parts

$2.448

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831

$2.448

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Ampacity Inc.

Singapore . 639 parts In-Stock

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$5.030

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639

$5.030

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QUARKTWIN TECHNOLOGY LTD

USA . 29,694 parts In-Stock

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29,694

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Microchip USA

USA . 5,992 parts In-Stock

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5,992

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Metaverse IC Inc.

Canada . 2,635 parts In-Stock

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2,635

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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Overview

Unlock the power of advanced technology with the IGB30N60T by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies brings you quality and reliability in every product. The IGB30N60T is part of the Insulated Gate Bipolar Transistors (IGBT) category, offering exceptional power control for a wide range of applications. With its N-CHANNEL polarity and SINGLE configuration, this transistor provides efficient performance and high durability. Experience the value and benefits of the IGB30N60T, and take your projects to the next level with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides strong insulation and protection for the internal components, ensuring reliable performance and longevity.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically offer lower conduction losses and faster switching speeds compared to P-channel, making them efficient for power control applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity in applications requiring only one IGBT.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, providing high efficiency and precise control over power flow.

Maximum Power Dissipation (Abs): 187 W

Can handle high levels of power dissipation, making it suitable for demanding applications that require efficient power handling.

Maximum Collector-Emitter Voltage: 600 V

Capable of handling high voltage levels, making it suitable for applications where high voltage operation is required.

Maximum Gate-Emitter Voltage: 20 V

Provides a safe operating range for gate control voltages, ensuring reliable and stable operation.

Maximum Collector Current (IC): 60 A

Capable of handling high currents, making it suitable for applications requiring large power outputs.

Nominal Turn On Time (ton): 50 ns

Offers fast turn-on times, allowing for precise control and fast switching speeds in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGB30N60T attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

HIGH SPEED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

382 ns

Nominal Turn On Time (ton):

50 ns

Trade Compliance

IGB30N60T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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