Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Maximum VCEsat: 2.15 V;
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Insulated Gate Bipolar Transistors (IGBT) IFS150B12N3E4_B31 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
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IFS150B12N3E4_B31 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
SMBJ18CA
Continental Device India
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV303N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
1N4148
Temic Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
LM2675M-ADJ/NOPB
National Semiconductor
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
2N2222A
Loras Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
World Products
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
MBRA340T3G
MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.
LFXTAL025159REEL
Iqd Frequency Products
LFXTAL025159REEL by IQD Frequency Products is a 32.768 kHz crystal oscillator with 20 ppm frequency tolerance and 40,000 ohm series resistance. It is ideal for applications requiring precise timekeeping, such as real-time clocks in IoT devices or microcontrollers in wearables. The surface-mount design with a drive level of 1 uW makes it suitable for compact electronic systems.
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
LM317T
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Adjustability: ADJUSTABLE; Package Equivalence Code: SIP3,.1TB;
LL4148
Taitron Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SS14
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Vishay Telefunken
General Instrument
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
IXGH16N170A
Littelfuse
The Littelfuse IXGH16N170A is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 16A. It has a nominal turn-off time of 330ns, making it ideal for motor control applications requiring high power dissipation up to 190W. The package style is flange mount with a rectangular shape and through-hole terminals.
APT75GP120J
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 128 A; JESD-30 Code: R-PUFM-X4; Package Style (Meter): FLANGE MOUNT;
AUIRG4BC30USTRL
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; JESD-609 Code: e3;
ISL9V3040D3ST
ISL9V3040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 450V and can handle a max collector current of 21A. This IGBT comes in a small outline package style and operates b/w -40 to 175 °C temperature range.
MG75Q1BS11
Toshiba
Toshiba's MG75Q1BS11 is an N-CHANNEL IGBT for MOTOR CONTROL applications. It features a Max VCEsat of 2.7V, Max IC of 75A, and Max VCE of 1200V. With a rise time of 600ns and fall time of 1000ns, it offers efficient power dissipation up to 300W in a RECTANGULAR package style.
FS50R12W2T4B11BOMA1
Infineon's FS50R12W2T4B11BOMA1 is an N-CHANNEL IGBT with 1200V VCE, 83A IC, and 490ns toff. Ideal for POWER CONTROL applications due to its complex configuration and fast switching times of 185ns ton.
FS75R12KE3BOSA1
FS75R12KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 105A, and turn off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
ISL9V2040D3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
APT200GN60J
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 250 A; Terminal Position: UPPER;
FF900R12IE4BOSA1
FF900R12IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 900A. Ideal for power control applications due to its fast turn on time of 350ns and turn off time of 940ns at a max operating temperature of 175°C.
FF1400R12IP4BOSA1
FF1400R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1200ns. Ideal for power control applications due to its SILICON material and operating temperature up to 175°C.
STGF20NB60S
STMicroelectronics
STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.
FP20R06W1E3BOMA1
FP20R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, designed for POWER CONTROL applications. It features a max Collector-Emitter Voltage of 600V, Nominal Turn Off Time of 250ns, and Max Collector Current of 27A. This COMPLEX transistor has a rectangular package style and operates at temperatures up to 175°C.
IRGP4640DPBF
IRGP4640DPBF by Infineon is an N-CHANNEL IGBT with 600V VCEsat, 65A IC, and 250W power dissipation. Ideal for power control applications, it features a built-in diode, 31ns rise time, and -55 to 175°C operating temperature range.
IKQ120N60TXKSA1
IKQ120N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 160A. It has a Nominal Turn On Time of 84ns and Nominal Turn Off Time of 398ns, making it ideal for POWER CONTROL applications.
HGTG11N120CND
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 11 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
SKM400GB125D
Semikron International
Semikron International's SKM400GB125D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 3.85V and Max IC of 400A, it operates at up to 150°C with a VCE of 1200V. This RECTANGULAR package has 7 terminals and meets IEC-60747-1 & UL standards.
IRG7PH42UD1PBF
IRG7PH42UD1PBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It has a power dissipation of 313W, making it suitable for power control applications requiring high voltage handling and efficient switching capabilities. With a fall time of 43ns and turn-off time of 460ns, this transistor is ideal for applications where fast switching speeds are crucial.
CM600DU-24NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; No. of Terminals: 7; Transistor Application: POWER CONTROL;
FS150R12KT4
Infineon FS150R12KT4 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 605ns and ton of 165ns, suitable for high-power applications. With a Vce(max) of 1200V and Tj(max) of 150°C, it's commonly used in power electronics for efficient switching operations.
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IFS100B12N3E4B31BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Transistor Application: POWER CONTROL; Maximum Gate-Emitter Threshold Voltage: 6.4 V;
IFS100B12N3E4_B40
N-Channel; Maximum Power Dissipation (Abs): 515 W; Maximum Gate-Emitter Threshold Voltage: 6.35 V; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V; Minimum Operating Temperature: -40 Cel;
IFS150B17N3E4P_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn On Time (ton): 270 ns; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1700 V;
IFS100B17N3E4PB11BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 150 A; No. of Terminals: 34; Reference Standard: UL RECOGNIZED;
IFS150B12N3T4_B31
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Voltage: 20 V;
IFS100B12N3T4B31BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Package Shape: RECTANGULAR; Terminal Position: UPPER; No. of Terminals: 34;
IFS150B17N3E4PB11BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
IFS100S12N3T4-B11
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 455 W; Maximum Collector Current (IC): 100 A; Maximum VCEsat: 2.1 V; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1;
IFS100B12N3E4P_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 150 A; Package Body Material: UNSPECIFIED;
IFS150B12N3E4PB11BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 220 A; Terminal Form: UNSPECIFIED;
IFS150B12N3E4B31BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 41; No. of Elements: 6;
IFS100B12N3T4_B31
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Position: UPPER; JESD-30 Code: R-XUFM-X34;
IFS150B12N3T4B31BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Reference Standard: UL RECOGNIZED; Nominal Turn On Time (ton): 165 ns; Terminal Position: UPPER;
IFS100B12N3E4B39BOSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Package Body Material: UNSPECIFIED; Nominal Turn Off Time (toff): 610 ns; No. of Elements: 6;
IFS100B17N3E4P_B11
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 150 A; Package Shape: RECTANGULAR;
IFS100B12N3E4-B31
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Peak Reflow Temperature (C): NOT SPECIFIED;
IFS100B12N3E4_B39
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 515 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;
IFS100B12N3E4PB11BPSA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Minimum Operating Temperature: -40 Cel; Terminal Form: UNSPECIFIED;
IFS150B12N3E4P_B11
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 220 A; Package Body Material: UNSPECIFIED;
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