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FS300R12KE3

Infineon Technologies

FS300R12KE3 by Infineon Technologies

Infineon's FS300R12KE3 is an N-CHANNEL IGBT with 6 elements, 3 banks, and a max VCEsat of 2.1V. With a max power dissipation of 1450W and IC of 500A, it's ideal for high-power applications like industrial motor drives due to its fast turn-off time (810ns) and high collector-emitter voltage (1200V).

Median Price

$538.500

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 20 parts In-Stock

1+ parts

$538.500

100+ parts

$472.030

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-

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20

$538.500

$472.030

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Distributors (In-Stock)

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Digiode

USA . 662 parts In-Stock

1+ parts

$456.779

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-

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662

$456.779

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Vyrian

USA . 917 parts In-Stock

1+ parts

$480.820

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917

$480.820

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Chip Stock

USA . 137 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 90 parts In-Stock

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90

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 22,879 parts In-Stock

1+ parts

$0.751

100+ parts

$0.721

1k+ parts

$0.691

10k+ parts

-

22,879

$0.751

$0.721

$0.691

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$1.235

100+ parts

$1.124

1k+ parts

$1.013

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-

20

$1.235

$1.124

$1.013

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Native Components

USA . 791 parts In-Stock

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$1.972

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791

$1.972

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Northwest PG Solutions

USA . 470 parts In-Stock

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$2.169

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470

$2.169

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Andel Nordic

Denmark . 434 parts In-Stock

1+ parts

$52.680

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$36.873

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$36.873

434

$52.680

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$36.873

$36.873

Corphita

USA . 855 parts In-Stock

1+ parts

$432.738

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855

$432.738

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Lixinc

USA . 14,253 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,012 parts In-Stock

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5,012

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Alle Elektronik GmbH

Germany . 3,341 parts In-Stock

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3,341

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Perfect Parts

USA . 1,290 parts In-Stock

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1,290

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Kepictronics

USA . 550 parts In-Stock

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550

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Authorized Procurement Solutions

USA . 10 parts In-Stock

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10

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Overview

Experience superior performance and reliability with the FS300R12KE3 by Infineon Technologies. As a leader in the semiconductor industry, Infineon delivers cutting-edge technology that exceeds expectations. The Insulated Gate Bipolar Transistor (IGBT) is ideal for a wide range of applications, offering customers unmatched value and benefits. With its advanced features and innovative design, this product ensures optimal efficiency and power management. Trust Infineon to provide you with the quality and performance you need for your projects.

Feature Benefit Bullets

Polarity or Channel Type

N-CHANNEL - This allows for efficient electron flow and high performance in power applications.

Configuration

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR - This configuration enhances reliability and overall system efficiency.

Maximum VCEsat

2.1 V - Lower VCEsat helps reduce power losses and improve efficiency in switching applications.

Package Shape

RECTANGULAR - Provides a compact and space-saving design for easy integration into various systems.

No. of Elements

6 - Having multiple elements allows for higher current handling capacity and increased power capabilities.

Nominal Turn Off Time (toff)

810 ns - Faster turn off time ensures efficient switching operations and minimizes power dissipation.

No. of Terminals

29 - Sufficient number of terminals for easy connectivity and control in complex circuitry.

Maximum Power Dissipation (Abs)

1450 W - High power dissipation capability enables the device to handle demanding applications with ease.

Package Style (Meter)

FLANGE MOUNT - Allows for secure and stable mounting in various industrial or electronic systems.

Maximum Operating Temperature

150 °C - Can operate at high temperatures without compromising performance, suitable for harsh environments.

Maximum Collector-Emitter Voltage

1200 V - High voltage rating makes it suitable for high-power applications and industrial use.

Transistor Element Material

SILICON - Silicon technology offers high-performance characteristics and reliability in power electronics.

Maximum Gate-Emitter Voltage

20 V - Ensures safe and controlled switching operation within specified voltage limits.

Maximum Collector Current (IC)

500 A - High current handling capability for demanding power applications and efficient operation.

Terminal Position

UPPER - Convenient terminal placement for easy accessibility and connectivity in circuit layouts.

Case Connection

ISOLATED - Provides electrical isolation for enhanced safety and reliability in circuit design.

Nominal Turn On Time (ton)

400 ns - Quick turn on time facilitates fast switching operations and improves overall system efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FS300R12KE3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X29

No. of Elements:

6

No. of Terminals:

29

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

810 ns

Nominal Turn On Time (ton):

400 ns

Maximum VCEsat:

2.1 V

Trade Compliance

FS300R12KE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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