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CY15V108QI-20LPXIT

Infineon Technologies

CY15V108QI-20LPXIT by Infineon Technologies

Infineon Technologies' CY15V108QI-20LPXIT is a FRAM with 1MX8 organization and 8-bit memory width. It operates at a synchronous mode with a max clock frequency of 20 MHz. This small outline, very thin profile package is suitable for applications requiring high endurance and low power consumption.

Median Price

$27.844

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 700 parts In-Stock

1+ parts

-

100+ parts

$24.750

1k+ parts

$22.140

10k+ parts

$20.840

700

-

$24.750

$22.140

$20.840

Verical

USA . 700 parts In-Stock

1+ parts

-

100+ parts

$30.938

1k+ parts

$27.675

10k+ parts

$26.050

700

-

$30.938

$27.675

$26.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 726 parts In-Stock

1+ parts

$26.125

100+ parts

-

1k+ parts

-

10k+ parts

-

726

$26.125

-

-

-

Vyrian

USA . 2,264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,264

-

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,471 parts In-Stock

1+ parts

$23.380

100+ parts

-

1k+ parts

-

10k+ parts

-

2,471

$23.380

-

-

-

Corphita

USA . 670 parts In-Stock

1+ parts

$24.750

100+ parts

-

1k+ parts

-

10k+ parts

-

670

$24.750

-

-

-

Component Stockers USA

USA . 3,403 parts In-Stock

1+ parts

$27.880

100+ parts

$26.200

1k+ parts

$23.700

10k+ parts

-

3,403

$27.880

$26.200

$23.700

-

Microchip USA

USA . 7,036 parts In-Stock

1+ parts

$79.695

100+ parts

-

1k+ parts

-

10k+ parts

-

7,036

$79.695

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 22,280 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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22,280

-

-

-

-

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Discover the CY15V108QI-20LPXIT, a top-quality FRAM memory by Infineon Technologies. With its cutting-edge technology and durable plastic/epoxy package, this memory offers unmatched reliability and performance. Whether it's for automotive, industrial, or consumer electronics applications, this versatile memory is the perfect choice. Experience the value of its small outline and very thin profile package, synchronous operation mode, and wide operating temperature range (-40°C to 85°C). With hardware/software write protection and an impressive endurance of 1 quadrillion write/erase cycles, this memory ensures data integrity and longevity. Upgrade your system with the CY15V108QI-20LPXIT and enjoy seamless performance and unmatched reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the FRAM, making it a reliable choice.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation of the FRAM onto circuit boards, saving time and effort.

No. of Functions: 1

With a single function, this FRAM is designed for specific tasks, ensuring focused and optimized performance.

Package Shape: RECTANGULAR

The rectangular shape offers compatibility with various mounting options, allowing flexibility in design and integration.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures synchronized data transfer, improving overall efficiency and reliability.

Nominal Supply Voltage / Vsup (V): 1.8

The low supply voltage requirement reduces power consumption, making it an energy-efficient solution.

No. of Terminals: 8

The 8 terminals offer simple connectivity options, making it easy to integrate the FRAM into existing systems.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

The small outline and thin profile design provide space-saving advantages, enabling usage in compact devices.

Maximum Operating Temperature: 85 °C

The FRAM's ability to operate in high-temperature environments allows for versatility in various applications.

Organization: 1MX8

A 1MX8 organization provides high-capacity storage in a compact form, ideal for applications requiring large volumes of data storage.

Minimum Standby Voltage: 1.71 V

The low standby voltage requirement minimizes power consumption during idle periods, enhancing energy efficiency.

Minimum Operating Temperature: -40 °C

With a wide temperature range, this FRAM can operate reliably in extreme cold conditions, expanding its potential applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish ensures excellent conductivity and corrosion resistance, enhancing product longevity.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit board design, accommodating different connection orientations.

Write Protection: HARDWARE/SOFTWARE

The write protection capability, whether through hardware or software, provides data security, preventing accidental or unauthorized modification.

Maximum Seated Height: 0.55 mm

The low seated height makes this FRAM suitable for compact devices with space limitations, enabling integration in smaller form factors.

Maximum Clock Frequency (fCLK): 20 MHz

The high maximum clock frequency supports fast data transfer rates, enhancing overall performance in time-sensitive applications.

Width: 3.23 mm

The compact width dimension allows for easy integration into space-constrained electronic systems, providing design flexibility.

Minimum Supply Voltage (Vsup): 1.71 V

The low minimum supply voltage requirement allows for use with a variety of power sources, expanding compatibility.

Peak Reflow Temperature °C: 260

The FRAM's ability to withstand high reflow temperatures ensures reliability and ease of manufacturing during production processes.

Length: 3.28 mm

The compact length dimension facilitates integration into small form factor devices, enabling space-efficient designs.

Technology: CMOS

The CMOS technology utilized in this FRAM ensures low power consumption, high speed, and compatibility with a wide range of electronic systems.

Parallel or Serial: SERIAL

The serial interface enables efficient data transfer and compatibility with a wide range of devices, making it suitable for various applications.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the risk of lead-related hazards, contributing to an environmentally friendly and safe product.

Maximum Supply Current: 1.75 mA

With low maximum supply current requirements, this FRAM offers energy-saving benefits, prolonging battery life in portable devices.

No. of Words: 1048576 words

The high number of words provides ample storage capacity, accommodating extensive data storage needs.

Memory Width: 8

With a memory width of 8, this FRAM supports efficient data retrieval and processing, enhancing overall system performance.

Minimum Data Retention Time: 10

The long minimum data retention time ensures the integrity and reliability of stored information, making it suitable for critical applications.

Terminal Pitch: 0.65 mm

The small terminal pitch allows for precise connections, ensuring reliable electrical contact and facilitating board-level integration.

No. of Words Code: 1M

The 1M words code indicates the high capacity of this FRAM, providing extensive storage capabilities for various applications.

Moisture Sensitivity Level (MSL): 3

With MSL 3, this FRAM demonstrates resistance to moisture-related issues during storage and handling, ensuring long-lasting performance and reliability.

Maximum Supply Voltage (Vsup): 1.89 V

The maximum supply voltage tolerance provides compatibility with a wide range of power sources, ensuring flexibility in system design.

Endurance: 1000000000000000 Write/Erase Cycles

The extremely high endurance capability allows for frequent and repetitive write/erase operations, making it suitable for demanding applications.

Serial Bus Type: SPI

The Serial Peripheral Interface (SPI) enables fast and efficient communication between the FRAM and other devices, enhancing overall system performance.

Memory Density: 8388608 bit

With a high memory density, this FRAM offers ample storage capacity for large volumes of data, meeting the needs of data-intensive applications.

Memory IC Type: FRAM

The Ferroelectric Random Access Memory (FRAM) technology ensures high speed, non-volatile data storage, and resistance to radiation, making it a reliable choice.

Maximum Standby Current: 0.00011 Amp

The low maximum standby current minimizes power consumption during idle periods, contributing to energy efficiency.

Technical Specifications

FRAMs CY15V108QI-20LPXIT attributes and parameters. Explore more FRAMs devices from Infineon Technologies

Specs

Additional Features:

2kv ESD available

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

10

Endurance:

1000000000000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3.28 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.2,25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.55 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00011 Amp

Minimum Standby Voltage:

1.71 V

Maximum Supply Current:

1.75 mA

Maximum Supply Voltage (Vsup):

1.89 V

Minimum Supply Voltage (Vsup):

1.71 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3.23 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CY15V108QI-20LPXIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.B.2

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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