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BSL606SNH6327

Infineon Technologies

BSL606SNH6327 by Infineon Technologies

Infineon Technologies' BSL606SNH6327 is a N-CHANNEL Power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 18.1A and an avalanche energy rating of 14mJ. This transistor is commonly used in automotive applications due to its AEC-Q101 reference standard compliance.

Median Price

$0.372

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Maritex

Poland . 120,000 parts In-Stock

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$0.372

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$0.372

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Digiode

USA . 885 parts In-Stock

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$0.494

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Vyrian

USA . 65,469 parts In-Stock

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65,469

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Cyclops Electronics Ltd

UK . 60,000 parts In-Stock

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VNN

France . 17,077 parts In-Stock

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Sensible Micro Corp

USA . 8,865 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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$0.162

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$0.162

LIBRA Elektronik GmbH

Germany . 2,147 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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Ampacity Inc.

Singapore . 65,494 parts In-Stock

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$0.442

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$0.442

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Semicontronic

India . 65,061 parts In-Stock

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$0.442

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$0.431

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$0.429

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65,061

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Corphita

USA . 881 parts In-Stock

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$0.468

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881

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Corohmni

South Africa . 133 parts In-Stock

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$0.835

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Modulus Dynamics

Lithuania . 6,235 parts In-Stock

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$1.701

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$1.633

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$1.565

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Cyclops Electronics Ltd (Excess)

UK . 39,000 parts In-Stock

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Kepictronics

USA . 26,547 parts In-Stock

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Lixinc

USA . 17,647 parts In-Stock

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Continental Prestige Electronics

USA . 6,786 parts In-Stock

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Argo Parts USA

USA . 1,799 parts In-Stock

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Infinite Electronics LLP (Excess)

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration allows for efficient conductivity and low resistance, making it suitable for various high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides reverse voltage protection, enhancing the overall reliability of the product.

Surface Mount: YES

The surface mount capability enables easy and efficient integration onto PCBs, saving assembly time and space.

Minimum DS Breakdown Voltage: 60 V

With a higher breakdown voltage, this transistor can handle higher voltages and provide enhanced protection against potential electrical faults.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy PCB layout and offers efficient use of space in compact designs.

Terminal Form: GULL WING

The gull wing terminal form allows for secure soldering and reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation provides precise control and lower power consumption, making it suitable for power management applications.

No. of Elements: 1

With a single element, this transistor offers simplicity in circuit design and reduces component count.

Maximum Pulsed Drain Current (IDM): 18.1 A

The high maximum pulsed drain current capability ensures the transistor can handle sudden surge currents, making it reliable for demanding applications.

Avalanche Energy Rating (EAS): 14 mJ

The high avalanche energy rating allows the transistor to withstand energy spikes, offering increased protection against voltage transients.

No. of Terminals: 6

With six terminals, this transistor provides versatile connectivity options, enabling flexibility in circuit connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and facilitates efficient heat dissipation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology ensures high switching speeds and low power consumption, making it ideal for various electronic applications.

Transistor Element Material: SILICON

Silicon offers excellent thermal conductivity and electrical performance, resulting in improved efficiency and reliability.

Maximum Drain Current (ID): 4.5 A

The high maximum drain current capability allows the transistor to handle significant current loads, enhancing its suitability for power applications.

Maximum Drain-Source On Resistance: 0.06 ohm

The low drain-source on resistance minimizes power losses and improves efficiency in switching applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit board layout, allowing for convenient integration into different system configurations.

Reference Standard: AEC-Q101

Complying with the AEC-Q101 standard ensures the product's reliability and suitability for automotive applications.

Technical Specifications

Power Field Effect Transistors (FET) BSL606SNH6327 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (EAS):

14 mJ

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

18.1 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

BSL606SNH6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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