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BDP953H6327XTSA1/SN

Infineon Technologies

BDP953H6327XTSA1/SN by Infineon Technologies

Infineon's BDP953H6327XTSA1/SN is a NPN Power BJT with 100V VCE, 3A IC, and 15 hFE. Ideal for amplifier applications, it operates up to 150°C with a fT of 100MHz. This surface-mount transistor in a small outline package features Gull Wing terminals and AEC-Q101 compliance.

Median Price

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Lifecycle Status

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4

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1k+

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VNN

France . 17,932 parts In-Stock

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Vyrian

USA . 1,104 parts In-Stock

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Digiode

USA . 947 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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Modulus Dynamics

Lithuania . 13,333 parts In-Stock

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$1.918

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$1.841

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$1.765

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13,333

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AZTECH Wire

Italy . 893 parts In-Stock

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$10.961

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Ampacity Inc.

Singapore . 468 parts In-Stock

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$19.050

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468

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Semicontronic

India . 182 parts In-Stock

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$33.050

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$32.224

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$32.058

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Continental Prestige Electronics

USA . 5,895 parts In-Stock

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Argo Parts USA

USA . 3,303 parts In-Stock

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Bastille Electronics

Australia . 75 parts In-Stock

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Corphita

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Overview

Discover the exceptional performance and reliability of the BDP953H6327XTSA1/SN by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Power Bipolar Junction Transistors (BJT) designed for various amplifier applications. With a durable plastic/epoxy package body material and NPN polarity, this transistor offers superior functionality and longevity. Its small outline package style and dual terminal position make it easy to integrate into your projects. Experience the benefits of Infineon's advanced technology with the BDP953H6327XTSA1/SN for improved efficiency and precision in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good electrical insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications and offer fast switching speeds, making them suitable for a wide range of electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes installation easier.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in audio or signal amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Rectangular shape helps in easy placement and soldering on the PCB, contributing to a more compact and organized circuit layout.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections, minimizing the risk of electrical faults or solder joint failures.

No. of Terminals: 4

Four terminals offer flexibility in circuit connections and allow for more versatile circuit design options.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for applications where board real estate is limited.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures consistent and reliable amplification performance across different operating conditions.

Maximum Operating Temperature: 150 °C

Ability to operate at temperatures up to 150°C ensures reliability in high-temperature environments.

Maximum Collector-Emitter Voltage: 100 V

High maximum collector-emitter voltage of 100V allows for versatility in voltage handling applications.

Transistor Element Material: SILICON

Silicon material offers high performance, low leakage current, and excellent thermal stability, ensuring long-term reliability.

Maximum Collector Current (IC): 3 A

Maximum collector current of 3A enables the transistor to handle high power output applications with ease.

Terminal Position: DUAL

Dual terminal position provides multiple connection options, enhancing flexibility in circuit layout and design.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and helps maintain the transistor's operating temperature within safe limits.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 automotive quality standard ensures reliability and durability in automotive electronic applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100MHz allows for fast switching speeds and wide bandwidth, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDP953H6327XTSA1/SN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDP953H6327XTSA1/SN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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