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BDP949H6327XTSA1

Infineon Technologies

BDP949H6327XTSA1 by Infineon Technologies

Infineon's BDP949H6327XTSA1 is a NPN BJT transistor with VCEsat of 0.5V, hFE of 50, and IC of 3A. Ideal for amplifier applications in automotive electronics due to AEC-Q101 standard compliance and 150°C operating temperature. Package: PLASTIC/EPOXY, GULL WING terminals, RECTANGULAR shape.

Median Price

$0.329

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 270 parts In-Stock

1+ parts

$0.447

100+ parts

$0.447

1k+ parts

$0.447

10k+ parts

-

270

$0.447

$0.447

$0.447

-

Mouser Electronics

USA . 2,983 parts In-Stock

1+ parts

$0.970

100+ parts

$0.408

1k+ parts

$0.231

10k+ parts

$0.210

2,983

$0.970

$0.408

$0.231

$0.210

Arrow

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.279

10k+ parts

$0.260

7,000

-

-

$0.279

$0.260

Verical

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.276

10k+ parts

$0.257

7,000

-

-

$0.276

$0.257

Chip1Stop

Japan . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.329

10k+ parts

$0.293

6,000

-

-

$0.329

$0.293

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 958 parts In-Stock

1+ parts

$0.425

100+ parts

-

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958

$0.425

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.510

100+ parts

-

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300

$0.510

-

-

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Chip Stock

USA . 112,450 parts In-Stock

1+ parts

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112,450

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-

-

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Schukat

Germany . 21,400 parts In-Stock

1+ parts

-

100+ parts

$0.532

1k+ parts

$0.367

10k+ parts

$0.353

21,400

-

$0.532

$0.367

$0.353

IBS Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.319

10k+ parts

$0.305

9,000

-

-

$0.319

$0.305

TME

Poland . 9,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.356

10k+ parts

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9,000

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-

$0.356

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Vyrian

USA . 4,630 parts In-Stock

1+ parts

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4,630

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VNN

France . 3,324 parts In-Stock

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3,324

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Bristol Electronics

USA . 2,000 parts In-Stock

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2,000

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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$1.030

10k+ parts

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1,000

-

-

$1.030

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,644 parts In-Stock

1+ parts

$0.211

100+ parts

$0.206

1k+ parts

$0.205

10k+ parts

-

4,644

$0.211

$0.206

$0.205

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Ampacity Inc.

Singapore . 4,869 parts In-Stock

1+ parts

$0.212

100+ parts

-

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4,869

$0.212

-

-

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Corphita

USA . 920 parts In-Stock

1+ parts

$0.402

100+ parts

-

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-

10k+ parts

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920

$0.402

-

-

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Modulus Dynamics

Lithuania . 8,991 parts In-Stock

1+ parts

$0.441

100+ parts

$0.423

1k+ parts

$0.406

10k+ parts

-

8,991

$0.441

$0.423

$0.406

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Corohmni

South Africa . 525 parts In-Stock

1+ parts

$0.441

100+ parts

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10k+ parts

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525

$0.441

-

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.447

100+ parts

$0.447

1k+ parts

$0.447

10k+ parts

-

270

$0.447

$0.447

$0.447

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Continental Prestige Electronics

USA . 3,072 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

-

10k+ parts

$0.500

3,072

$0.510

-

-

$0.500

Argo Parts USA

USA . 1,528 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

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10k+ parts

$0.495

1,528

$0.510

-

-

$0.495

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

$0.484

10k+ parts

$0.474

100

$0.510

-

$0.484

$0.474

Aztec Data Supply Inc.

USA . 739 parts In-Stock

1+ parts

$1.219

100+ parts

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739

$1.219

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Microchip USA

USA . 2,665 parts In-Stock

1+ parts

$3.311

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2,665

$3.311

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RC Electronics

USA . 40,000 parts In-Stock

1+ parts

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100+ parts

$0.490

1k+ parts

$0.460

10k+ parts

$0.450

40,000

-

$0.490

$0.460

$0.450

Eastek

USA . 24,000 parts In-Stock

1+ parts

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$0.551

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24,000

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$0.551

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Infinite Electronics LLP (Excess)

. 18,002 parts In-Stock

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18,002

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Lixinc

USA . 15,087 parts In-Stock

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15,087

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Perfect Parts

USA . 5,600 parts In-Stock

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5,600

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Robosynatics

Brazil . 500 parts In-Stock

1+ parts

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100+ parts

$1.245

1k+ parts

$1.153

10k+ parts

$1.153

500

-

$1.245

$1.153

$1.153

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$1.245

1k+ parts

$1.153

10k+ parts

$1.153

500

-

$1.245

$1.153

$1.153

Overview

Experience the power of innovation with the BDP949H6327XTSA1 by Infineon Technologies. As a leader in Power Bipolar Junction Transistors, Infineon Technologies brings you a high-quality NPN transistor that is perfect for amplifier applications. With a maximum VCEsat of only 0.5V and a minimum DC current gain of 50, this transistor offers superior performance and efficiency. Whether you're designing audio amplifiers, motor control circuits, or LED drivers, the BDP949H6327XTSA1 provides the reliability and precision you need for your projects. Trust in Infineon Technologies to deliver cutting-edge solutions that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protects the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications and offer good performance characteristics.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate the transistor into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal power loss and efficient operation of the transistor in amplification circuits.

Package Shape: RECTANGULAR

Rectangular package shape provides compatibility with standard PCB designs and facilitates easy mounting.

Terminal Form: GULL WING

Gull wing terminal form offers secure connection and reliable performance in various mounting configurations.

No. of Terminals: 4

Four terminals provide necessary connections for amplification applications while keeping the overall size compact.

Maximum Power Dissipation (Abs): 5 W

High power dissipation capability ensures the transistor can handle high current loads without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for dense packing of components in electronic systems.

Minimum DC Current Gain (hFE): 50

Minimum DC current gain of 50 ensures consistent and reliable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand elevated temperatures without compromising performance.

Maximum Collector-Base Capacitance: 25 pF

Low collector-base capacitance minimizes signal distortion and interference in amplification circuits.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides a safe operating margin and protects the transistor from voltage spikes.

Transistor Element Material: SILICON

Silicon is a reliable and durable semiconductor material that ensures stable performance over a wide temperature range.

Maximum Collector Current (IC): 3 A

High collector current rating allows the transistor to handle high current loads, making it suitable for power amplifier applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for easy connection to external components.

Case Connection: COLLECTOR

Case connection to collector simplifies the circuit layout and improves thermal management for efficient operation.

Reference Standard: AEC-Q101

Conformance to AEC-Q101 standard ensures the transistor meets automotive industry requirements for reliability and quality.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows for fast response times and improved performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDP949H6327XTSA1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

5 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BDP949H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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