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2SK521

Hitachi

2SK521 by Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .15 W; No. of Elements: 1; Terminal Position: SINGLE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 849 parts In-Stock

1+ parts

$1.367

100+ parts

-

1k+ parts

-

10k+ parts

-

849

$1.367

-

-

-

Northwest PG Solutions

USA . 2,076 parts In-Stock

1+ parts

$1.504

100+ parts

-

1k+ parts

-

10k+ parts

-

2,076

$1.504

-

-

-

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2SK521 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Hitachi

Specs

Configuration:

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.6 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK521 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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