Loading...

2SK3175A

Hitachi

2SK3175A by Hitachi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 126 W; Transistor Application: AMPLIFIER; Package Style (Meter): FLANGE MOUNT;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 768 parts In-Stock

1+ parts

$10.540

100+ parts

-

1k+ parts

-

10k+ parts

-

768

$10.540

-

-

-

Northwest PG Solutions

USA . 1,198 parts In-Stock

1+ parts

$11.594

100+ parts

$10.435

1k+ parts

-

10k+ parts

-

1,198

$11.594

$10.435

-

-

Technical Specifications

RF Power Field Effect Transistors (FET) 2SK3175A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Hitachi

Specs

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK3175A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.