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FLL1200IU-2

Fujitsu Semiconductor America

FLL1200IU-2 by Fujitsu Semiconductor America

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Maximum Drain Current (ID): 30 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SPM Sales

USA . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5

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-

-

-

Technical Specifications

RF Power Field Effect Transistors (FET) FLL1200IU-2 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Fujitsu Semiconductor America

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

15 V

Maximum Drain Current (ID):

30 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

GALLIUM ARSENIDE

Trade Compliance

FLL1200IU-2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fujitsu Semiconductor America

Fujitsu Semiconductor America, Inc. leads the industry in innovation. Specifically, Fujitsu provides high-quality, reliable semiconductor products and services for the wireless, automotive, consumer, industrial, communications, and other markets throughout North and South America.

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