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MRF5P20180R6

Freescale Semiconductor

MRF5P20180R6 by Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 407 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified;

Median Price

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USA . 1,982 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 1,956 parts In-Stock

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$38.050

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Authorized Procurement Solutions

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Corphita

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UNI Independent Distributors

Spain . 2,791 parts In-Stock

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF5P20180R6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF5P20180R6 Transistors trade compliance attributes, and parameters.

ECCN

5A991

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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