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AFT26H200W03SR6

Freescale Semiconductor

AFT26H200W03SR6 by Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; No. of Elements: 1; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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Technical Specifications

RF Power Field Effect Transistors (FET) AFT26H200W03SR6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Configuration:

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

225 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Sub-Category:

FET General Purpose Powers

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

AFT26H200W03SR6 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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