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L14N2

Fairchild Semiconductor

L14N2 by Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Power Dissipation: .6 W; Nominal Light Current: 2 mA;

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Technical Specifications

Phototransistors L14N2 attributes and parameters. Explore more Phototransistors devices from Fairchild Semiconductor

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

Nominal Light Current:

2 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Peak Wavelength (nm):

940

Maximum Power Dissipation:

.6 W

Maximum Response Time:

.000014 s

Shape:

CYLINDRICAL

Size:

4.67 mm

Sub-Category:

Photo Transistors

Trade Compliance

L14N2 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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