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FQAF13N80

Fairchild Semiconductor

FQAF13N80 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Qualification: Not Qualified; No. of Terminals: 3;

Median Price

$5.471

Lifecycle Status

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14

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1k+

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Rochester

USA . 260 parts In-Stock

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$3.500

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$3.430

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$3.360

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$3.500

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Element14

Singapore . 222 parts In-Stock

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$5.471

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DigiKey

USA . 360 parts In-Stock

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$5.720

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$3.392

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$2.861

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$5.720

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Farnell

UK . 222 parts In-Stock

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$6.554

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$3.777

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Future Electronics

Canada . 7 parts In-Stock

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$2.630

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$2.570

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$2.530

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Digiode

USA . 872 parts In-Stock

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$2.755

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Nova Conductors

Japan . 50 parts In-Stock

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$3.460

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Vyrian

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Bristol Electronics

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Dan-Mar Components

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ACDS - Activité Composants Distribution Service

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IBS Electronics

USA . 7 parts In-Stock

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$2.945

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$2.833

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$2.777

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$2.777

Distributors (Availability)

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Ampacity Inc.

Singapore . 429 parts In-Stock

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$2.240

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Corphita

USA . 2,228 parts In-Stock

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Corohmni

South Africa . 111 parts In-Stock

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Continental Prestige Electronics

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$2.910

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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TANS Electronics

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Microchip USA

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Kulean Microsystems

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Authorized Procurement Solutions

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Kepictronics

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SupplyDigital Components

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Netroflash

USA . 2,000 parts In-Stock

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$3.287

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$3.218

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Alle Elektronik GmbH

Germany . 1,173 parts In-Stock

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Metaverse IC Inc.

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UHIMA Technologies

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Supply Digital

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Problanco Electronics

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Cyclops Electronics Ltd (Excess)

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Technical Specifications

Power Field Effect Transistors (FET) FQAF13N80 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

1100 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.75 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

32 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQAF13N80 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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