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FDB42AN15A0_F085

Fairchild Semiconductor

FDB42AN15A0_F085 by Fairchild Semiconductor

Fairchild Semiconductor FDB42AN15A0_F085 is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 35A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 150W.

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$0.980

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Overview

Elevate your power management capabilities with the FDB42AN15A0_F085 by Fairchild Semiconductor. Crafted with precision and expertise, this N-channel Power Field Effect Transistor offers superior performance in switching applications. Its single configuration with built-in diode ensures efficiency and reliability. Whether you're looking to enhance your electronic devices or optimize power distribution systems, this transistor is the perfect solution. Trust in Fairchild Semiconductor's reputation for quality and innovation, and experience the value and benefits that the FDB42AN15A0_F085 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the FET, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance and efficiency in switching applications compared to P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching and reverse current protection in the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in high-frequency operation.

Surface Mount: YES

Enables easy integration onto PCBs, saving space and reducing assembly time.

Maximum Drain Current (Abs) (ID): 35 A

High maximum drain current capability allows for handling larger loads in the circuit.

Maximum Power Dissipation (Abs): 150 W

With a high power dissipation rating, this FET can handle heavy loads without overheating.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without compromising performance.

Technical Specifications

Power Field Effect Transistors (FET) FDB42AN15A0_F085 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

78 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

150 V

Maximum Drain Current (Abs) (ID):

35 A

Maximum Drain Current (ID):

35 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDB42AN15A0_F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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